Assignee
TOH ENG HUAT
SG·21 granted patents·1 pending application·164 citations·filing 2009–2013
Top patents by PatentIndex Score
22 records- 0197US8492235B2FinFET with stressorsTOH ENG HUAT·Filed 2010·Granted Jul 23, 2013·29 cites·19 claims
- 0297US8440533B2Self-aligned contact for replacement metal gate and silicide last processesTOH ENG HUAT·Filed 2011·Granted May 14, 2013·33 cites·9 claims
- 0395US8502279B2Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substratesTOH ENG HUAT·Filed 2011·Granted Aug 6, 2013·24 cites·21 claims
- 0492US8889494B2FinfetTOH ENG HUAT·Filed 2010·Granted Nov 18, 2014·14 cites·17 claims
- 0592US8748271B2LDMOS with improved breakdown voltageTOH ENG HUAT·Filed 2011·Granted Jun 10, 2014·13 cites·12 claims
- 0691US8647937B2Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levelsTOH ENG HUAT·Filed 2012·Granted Feb 11, 2014·10 cites·12 claims
- 0789US8698118B2Compact RRAM device and methods of making sameTOH ENG HUAT·Filed 2012·Granted Apr 15, 2014·9 cites·23 claims
- 0886US9029231B2Fin selector with gated RRAMTOH ENG HUAT·Filed 2013·Granted May 12, 2015·4 cites·8 claims
- 0981US9034711B2LDMOS with two gate stacks having different work functions for improved breakdown voltageTOH ENG HUAT·Filed 2011·Granted May 19, 2015·5 cites·12 claims
- 1081US8674457B2Methods to reduce gate contact resistance for AC reff reductionTOH ENG HUAT·Filed 2010·Granted Mar 18, 2014·6 cites·18 claims
- 1181US8674332B2RRAM device with an embedded selector structure and methods of making sameTOH ENG HUAT·Filed 2012·Granted Mar 18, 2014·5 cites·38 claims
- 1278US9276041B2Three dimensional RRAM device, and methods of making sameTOH ENG HUAT·Filed 2012·Granted Mar 1, 2016·3 cites·26 claims
- 1372US8895402B2Fin-type memoryTOH ENG HUAT·Filed 2012·Granted Nov 25, 2014·2 cites·21 claims
- 1471US8750037B2Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereofTOH ENG HUAT·Filed 2009·Granted Jun 10, 2014·4 cites·8 claims
- 1570US9064803B2Split-gate flash memory exhibiting reduced interferenceTOH ENG HUAT·Filed 2011·Granted Jun 23, 2015·2 cites·12 claims
- 1661US8999828B2Method and device for a split-gate flash memory with an extended word gate below a channel regionTOH ENG HUAT·Filed 2011·Granted Apr 7, 2015·1 cites·13 claims
- 1752US9362274B2Self-aligned contact for replacement metal gate and silicide last processesTOH ENG HUAT·Filed 2013·Granted Jun 7, 2016·0 cites·16 claims
- 1851US9054209B2Compact charge trap multi-time programmable memoryTOH ENG HUAT·Filed 2012·Granted Jun 9, 2015·0 cites·12 claims
- 1949US8470700B2Semiconductor device with reduced contact resistance and method of manufacturing thereofTOH ENG HUAT·Filed 2010·Granted Jun 25, 2013·0 cites·15 claims
- 2045US9093551B2Method and apparatus for embedded NVM utilizing an RMG processTOH ENG HUAT·Filed 2012·Granted Jul 28, 2015·0 cites·12 claims
- 2141US9029227B2P-channel flash with enhanced band-to-band tunneling hot electron injectionTOH ENG HUAT·Filed 2011·Granted May 12, 2015·0 cites·13 claims
- 2236US2014048867A1Multi-time programmable memoryTOH ENG HUAT·Filed 2012·Application pending·0 cites
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