Assignee
TAMURA NAOYOSHI
JP·16 granted patents·64 citations·filing 2008–2012
Top patents by PatentIndex Score
16 records- 0190US8247284B2Manufacture of semiconductor device with stress structureTAMURA NAOYOSHI·Filed 2011·Granted Aug 21, 2012·9 cites·14 claims
- 0288US8740477B2Hybrid connectorTAMURA NAOYOSHI·Filed 2010·Granted Jun 3, 2014·10 cites·20 claims
- 0387US8338831B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2010·Granted Dec 25, 2012·10 cites·20 claims
- 0486US8269256B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2008·Granted Sep 18, 2012·11 cites·10 claims
- 0585US8586438B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2012·Granted Nov 19, 2013·8 cites·20 claims
- 0682US8519486B2Semiconductor device having a plurality of phosphorus-doped silicon carbide layersTAMURA NAOYOSHI·Filed 2010·Granted Aug 27, 2013·4 cites·10 claims
- 0778US8502284B2Semiconductor device and method of manufacturing semiconductor deviceTAMURA NAOYOSHI·Filed 2009·Granted Aug 6, 2013·6 cites·18 claims
- 0869US8134189B2Semiconductor device and method of manufacturing the sameTAMURA NAOYOSHI·Filed 2008·Granted Mar 13, 2012·3 cites·6 claims
- 0968US8232180B2Manufacturing method of semiconductor device comprising active region divided by STI element isolation structureTAMURA NAOYOSHI·Filed 2010·Granted Jul 31, 2012·2 cites·7 claims
- 1062US9214524B2Method of manufacturing a semiconductor deviceTAMURA NAOYOSHI·Filed 2012·Granted Dec 15, 2015·1 cites·9 claims
- 1155US8071435B2Manufacture of semiconductor device with stress structureTAMURA NAOYOSHI·Filed 2009·Granted Dec 6, 2011·0 cites·14 claims
- 1254US8501571B2Method of manufacturing semiconductor device having silicon carbide layers containing phosphorusTAMURA NAOYOSHI·Filed 2012·Granted Aug 6, 2013·0 cites·5 claims
- 1351US8247283B2Manufacture of semiconductor device with stress structureTAMURA NAOYOSHI·Filed 2011·Granted Aug 21, 2012·0 cites·6 claims
- 1450US8741721B2Semiconductor device and manufacturing method thereofTAMURA NAOYOSHI·Filed 2011·Granted Jun 3, 2014·0 cites·8 claims
- 1550US8551849B2Semiconductor device and method of manufacturing the sameTAMURA NAOYOSHI·Filed 2012·Granted Oct 8, 2013·0 cites·7 claims
- 1648US8703596B2Semiconductor device and method of manufacturing semiconductor deviceTAMURA NAOYOSHI·Filed 2012·Granted Apr 22, 2014·0 cites·8 claims
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