Assignee
SUDO GAKU
JP·12 granted patents·1 pending application·90 citations·filing 2008–2012
Top patents by PatentIndex Score
13 records- 0197US8835268B2Method for manufacturing semiconductor deviceSUDO GAKU·Filed 2012·Granted Sep 16, 2014·45 cites·14 claims
- 0291US8658504B2Method for manufacturing semiconductor deviceSUDO GAKU·Filed 2012·Granted Feb 25, 2014·13 cites·15 claims
- 0387US8866206B2Integrated circuit device and method for manufacturing sameSUDO GAKU·Filed 2012·Granted Oct 21, 2014·7 cites·9 claims
- 0482US8659159B2Integrated circuit device with interconnects arranged parallel to each other and connected to contact via, and method for manufacturing sameSUDO GAKU·Filed 2011·Granted Feb 25, 2014·4 cites·1 claims
- 0579US8785325B2Method of manufacturing semiconductor deviceSUDO GAKU·Filed 2011·Granted Jul 22, 2014·4 cites·18 claims
- 0677US8154050B2Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the sameSUDO GAKU·Filed 2008·Granted Apr 10, 2012·7 cites·6 claims
- 0775US9178064B2Method for manufacturing fin semiconductor device using dual masking layersSUDO GAKU·Filed 2012·Granted Nov 3, 2015·4 cites·20 claims
- 0870US8129790B2HOT process STI in SRAM device and method of manufacturingSUDO GAKU·Filed 2009·Granted Mar 6, 2012·3 cites·3 claims
- 0969US8614138B2Manufacturing method of semiconductor deviceSUDO GAKU·Filed 2012·Granted Dec 24, 2013·2 cites·12 claims
- 1062US8168520B2Method of manufacturing semiconductor deviceSUDO GAKU·Filed 2009·Granted May 1, 2012·1 cites·18 claims
- 1150US8153501B2Maskless selective boron-doped epitaxial growthSUDO GAKU·Filed 2009·Granted Apr 10, 2012·0 cites·16 claims
- 1243US2008251842A1P-Channel FET Whose Hole Mobility is Improved by Applying Stress to the Channel Region and a Method of Manufacturing the SameSUDO GAKU·Filed 2008·Application pending·0 cites
- 1340US8860104B2Semiconductor device and method for manufacturing sameSUDO GAKU·Filed 2012·Granted Oct 14, 2014·0 cites·4 claims
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