Assignee
NEMOUCHI FABRICE
FR·3 granted patents·8 citations·filing 2009–2012
Top patents by PatentIndex Score
3 records- 0172US8664104B2Method of producing a device with transistors strained by means of an external layerNEMOUCHI FABRICE·Filed 2012·Granted Mar 4, 2014·4 cites·14 claims
- 0259US8586463B2Method for preparing a layer comprising nickel monosilicide NiSi on a substrate comprising siliconNEMOUCHI FABRICE·Filed 2009·Granted Nov 19, 2013·3 cites·20 claims
- 0354US9093552B2Manufacturing method for a device with transistors strained by silicidation of source and drain zonesNEMOUCHI FABRICE·Filed 2012·Granted Jul 28, 2015·1 cites·12 claims
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