Assignee
MOMOSE KENJI
JP·4 granted patents·34 citations·filing 2008–2012
Top patents by PatentIndex Score
4 records- 0191US8716718B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2012·Granted May 6, 2014·15 cites·13 claims
- 0288US8823015B2Silicon carbide epitaxial wafer and manufacturing method thereforMOMOSE KENJI·Filed 2010·Granted Sep 2, 2014·11 cites·5 claims
- 0378US9287121B2SIC epitaxial wafer and method for manufacturing sameMOMOSE KENJI·Filed 2012·Granted Mar 15, 2016·5 cites·6 claims
- 0469US8293623B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2008·Granted Oct 23, 2012·3 cites·14 claims
Join the waitlist — get patent alerts
Get an alert when MOMOSE KENJI files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →