Assignee
KIM JUN-YOUN
KR·11 granted patents·45 citations·filing 2010–2014
Top patents by PatentIndex Score
11 records- 0194US8460990B2CMOS transistor using germanium condensation and method of fabricating the sameKIM JUN-YOUN·Filed 2012·Granted Jun 11, 2013·16 cites·11 claims
- 0290US8476670B2Light emitting devices and methods of manufacturing the sameKIM JUN-YOUN·Filed 2010·Granted Jul 2, 2013·6 cites·9 claims
- 0389US9337381B2Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structureKIM JUN-YOUN·Filed 2014·Granted May 10, 2016·10 cites·19 claims
- 0483US8716749B2Substrate structures and methods of manufacturing the sameKIM JUN-YOUN·Filed 2010·Granted May 6, 2014·6 cites·22 claims
- 0578US8741706B2High electron mobility transistor and method of manufacturing the sameKIM JUN-YOUN·Filed 2013·Granted Jun 3, 2014·3 cites·26 claims
- 0673US8536623B2High electron mobility transistor and method of manufacturing the sameKIM JUN-YOUN·Filed 2012·Granted Sep 17, 2013·2 cites·32 claims
- 0763US8957432B2Semiconductor deviceKIM JUN-YOUN·Filed 2011·Granted Feb 17, 2015·1 cites·14 claims
- 0863US8541771B2Semiconductor device and method of manufacturing the sameKIM JUN-YOUN·Filed 2011·Granted Sep 24, 2013·1 cites·25 claims
- 0950US8643059B2Substrate structure and method of manufacturing the sameKIM JUN-YOUN·Filed 2011·Granted Feb 4, 2014·0 cites·10 claims
- 1045US9422638B2Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrateKIM JUN-YOUN·Filed 2012·Granted Aug 23, 2016·0 cites·21 claims
- 1145US9224909B2GaN based light emitting devices utilizing dispersion bragg reflection layerKIM JUN-YOUN·Filed 2013·Granted Dec 29, 2015·0 cites·13 claims
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →