Assignee
IWAYAMA MASAYOSHI
JP·7 granted patents·3 pending applications·115 citations·filing 2008–2015
Top patents by PatentIndex Score
10 records- 0196US8339841B2Magnetoresistive element including upper electrode having hexagonal cross-section shape and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2010·Granted Dec 25, 2012·31 cites·13 claims
- 0295US9231193B2Magnetic memory and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2014·Granted Jan 5, 2016·15 cites·13 claims
- 0395US8314464B2Semiconductor device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Granted Nov 20, 2012·28 cites·7 claims
- 0495US8309950B2Semiconductor device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Granted Nov 13, 2012·25 cites·11 claims
- 0593US9306152B2Magnetic memory and method for manufacturing the sameIWAYAMA MASAYOSHI·Filed 2014·Granted Apr 5, 2016·12 cites·14 claims
- 0682US9590173B2Magnetic memory and method for manufacturing the sameIWAYAMA MASAYOSHI·Filed 2015·Granted Mar 7, 2017·4 cites·20 claims
- 0740US9276039B2Semiconductor storage device and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2012·Granted Mar 1, 2016·0 cites·10 claims
- 0838US2012056253A1Semiconductor memory device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Application pending·0 cites
- 0937US2012273844A1Magnetic random access memory and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2011·Application pending·0 cites
- 1036US2008277703A1Magnetoresistive random access memory and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2008·Application pending·0 cites
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