Assignee
IRANI RUSTOM
0 granted patents·3 pending applications·0 citations·filing 2007–2010
Top patents by PatentIndex Score
3 records- 0144US2008111182A1Forming buried contact etch stop layer (CESL) in semiconductor devices self-aligned to diffusionIRANI RUSTOM·Filed 2007·Application pending·0 cites
- 0244US2011057241A1Forming silicon trench isolation (sti) in semiconductor devices self-aligned to diffusionIRANI RUSTOM·Filed 2010·Application pending·0 cites
- 0343US2008025084A1High aspect ration bitline oxidesIRANI RUSTOM·Filed 2007·Application pending·0 cites
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