Assignee
IKUTA TERUHISA
JP·3 granted patents·0 citations·filing 2010–2011
Top patents by PatentIndex Score
3 records- 0148US8304858B2Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereofIKUTA TERUHISA·Filed 2011·Granted Nov 6, 2012·0 cites·5 claims
- 0247US8093131B2Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereofIKUTA TERUHISA·Filed 2010·Granted Jan 10, 2012·0 cites·7 claims
- 0332US8823106B2ESD protective element and plasma display including the ESD protective elementIKUTA TERUHISA·Filed 2010·Granted Sep 2, 2014·0 cites·20 claims
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