Assignee
GUO YIMIN
US·44 granted patents·18 pending applications·340 citations·filing 2007–2024
Top patents by PatentIndex Score
62 records- 0199US8797692B1Magnetic recording sensor with AFM exchange coupled shield stabilizationGUO YIMIN·Filed 2012·Granted Aug 5, 2014·166 cites·13 claims
- 0298US11251367B2Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinningGUO YIMIN·Filed 2020·Granted Feb 15, 2022·4 cites·20 claims
- 0398US8963222B2Spin hall effect magnetic-RAMGUO YIMIN·Filed 2014·Granted Feb 24, 2015·24 cites·20 claims
- 0497US11854589B2STT-SOT hybrid magnetoresistive element and manufacture thereofGUO YIMIN·Filed 2021·Granted Dec 26, 2023·4 cites·20 claims
- 0595US9275713B2Magnetoresistive element and method of manufacturing the sameGUO YIMIN·Filed 2014·Granted Mar 1, 2016·14 cites·17 claims
- 0693US11450466B2Composite seed structure to improve PMA for perpendicular magnetic pinningGUO YIMIN·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 0792US9024399B2Perpendicular STT-MRAM having logical magnetic shieldingGUO YIMIN·Filed 2014·Granted May 5, 2015·13 cites·26 claims
- 0892US8268641B2Spin transfer MRAM device with novel magnetic synthetic free layerGUO YIMIN·Filed 2011·Granted Sep 18, 2012·9 cites·12 claims
- 0990US9362489B1Method of making a magnetoresistive elementGUO YIMIN·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 1090US9006849B2Hybrid method of patterning MTJ stackGUO YIMIN·Filed 2014·Granted Apr 14, 2015·8 cites·21 claims
- 1189US9741929B2Method of making a spin-transfer-torque magnetoresistive random access memory (STT-MRAM)GUO YIMIN·Filed 2015·Granted Aug 22, 2017·7 cites·18 claims
- 1287US11910721B2Perpendicular MTJ element having a cube-textured reference layer and methods of making the sameGUO YIMIN·Filed 2021·Granted Feb 20, 2024·1 cites·20 claims
- 1387US8058697B2Spin transfer MRAM device with novel magnetic synthetic free layerGUO YIMIN·Filed 2007·Granted Nov 15, 2011·13 cites·13 claims
- 1485US9461243B2STT-MRAM and method of manufacturing the sameGUO YIMIN·Filed 2014·Granted Oct 4, 2016·9 cites·17 claims
- 1584US8203332B2Gear tooth sensor (GTS) with magnetoresistive bridgeGUO YIMIN·Filed 2008·Granted Jun 19, 2012·13 cites·29 claims
- 1682US9087983B2Self-aligned process for fabricating voltage-gated MRAMGUO YIMIN·Filed 2014·Granted Jul 21, 2015·4 cites·27 claims
- 1781US9099188B2Magnetoresistive elementGUO YIMIN·Filed 2014·Granted Aug 4, 2015·7 cites·41 claims
- 1881US8058871B2MTJ based magnetic field sensor with ESD shunt traceGUO YIMIN·Filed 2008·Granted Nov 15, 2011·10 cites·21 claims
- 1979US8715776B2Method for providing AFM exchange pinning fields in multiple directions on same substrateGUO YIMIN·Filed 2007·Granted May 6, 2014·9 cites·26 claims
- 2078US9257637B2Method of manufacturing MRAM memory elementsGUO YIMIN·Filed 2014·Granted Feb 9, 2016·3 cites·19 claims
- 2171US10522589B2Method of making a magnetoresistive elementGUO YIMIN·Filed 2013·Granted Dec 31, 2019·2 cites·2 claims
- 2267US10783943B2MRAM having novel self-referenced read methodGUO YIMIN·Filed 2014·Granted Sep 22, 2020·1 cites·20 claims
- 2367US10608170B2Electric field assisted perpendicular STT-MRAMGUO YIMIN·Filed 2014·Granted Mar 31, 2020·1 cites·19 claims
- 2467US9287323B2Perpendicular magnetoresistive elementsGUO YIMIN·Filed 2014·Granted Mar 15, 2016·3 cites·21 claims
- 2558US8059372B2CPP GMR read head with minimum shunting lossGUO YIMIN·Filed 2007·Granted Nov 15, 2011·1 cites·12 claims
- 2657US11545290B2Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropyGUO YIMIN·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 2757US11271034B2Method of manufacturing magnetic memory devicesGUO YIMIN·Filed 2014·Granted Mar 8, 2022·1 cites·1 claims
- 2856US8674466B2Magnetic random access memory with selective toggle memory cellsGUO YIMIN·Filed 2008·Granted Mar 18, 2014·2 cites·10 claims
- 2955US11450467B2Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the sameGUO YIMIN·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 3054US8089265B2MTJ sensor including domain stable free layerGUO YIMIN·Filed 2009·Granted Jan 3, 2012·0 cites·5 claims
- 3152US9054301B2Method of making an integrated device using oxygen ion implantationGUO YIMIN·Filed 2014·Granted Jun 9, 2015·0 cites·19 claims
- 3252US2014203383A1Perpendicular magnetoresistive memory elementGUO YIMIN·Filed 2014·Application pending·0 cites
- 3352US2025322860A1Novel spin-orbit torque magnetic-ram having spin diffusion barrier layersGUO YIMIN·Filed 2024·Application pending·0 cites
- 3452US2014246741A1Magnetoresistive memory cell and method of manufacturing the sameGUO YIMIN·Filed 2014·Application pending·0 cites
- 3552US2014295579A1Method of patterning mtj stackGUO YIMIN·Filed 2014·Application pending·0 cites
- 3651US11805702B2Methods of forming perpendicular magnetoresistive elements using sacrificial layersGUO YIMIN·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 3751US11527708B2Ultra-fast magnetic random access memory having a composite SOT-MTJ structureGUO YIMIN·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 3850US2014339661A1Method to make mram using oxygen ion implantationGUO YIMIN·Filed 2014·Application pending·0 cites
- 3949US11038100B1Magnetoresistive element having a perpendicular AFM structureGUO YIMIN·Filed 2019·Granted Jun 15, 2021·0 cites·18 claims
- 4048US11957063B2Magnetoresistive element having a nano-current-channel structureGUO YIMIN·Filed 2021·Granted Apr 9, 2024·0 cites·19 claims
- 4148US11316102B2Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinningGUO YIMIN·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 4248US2022045267A1Magnetoresistive element having a sidewall-current-channel structureGUO YIMIN·Filed 2021·Application pending·0 cites
- 4347US10953319B2Spin transfer MRAM element having a voltage bias controlGUO YIMIN·Filed 2014·Granted Mar 23, 2021·0 cites·15 claims
- 4447US2023039108A1Perpendicular mtj element having a soft-magnetic adjacent layer and methods of making the sameGUO YIMIN·Filed 2021·Application pending·0 cites
- 4546US10937958B2Magnetoresistive element having a novel cap multilayerGUO YIMIN·Filed 2019·Granted Mar 2, 2021·0 cites·14 claims
- 4645US2022246836A1Composite recording structure for an improved write profermanceGUO YIMIN·Filed 2021·Application pending·0 cites
- 4745US2022238799A1Magnetoresistive element having a composite recording structureGUO YIMIN·Filed 2021·Application pending·0 cites
- 4845US2014252439A1Mram having spin hall effect writing and method of making the sameGUO YIMIN·Filed 2014·Application pending·0 cites
- 4944US11043631B2Perpendicular magnetoresistive elementsGUO YIMIN·Filed 2020·Granted Jun 22, 2021·0 cites·7 claims
- 5043US11569440B2Making a memoristic array with an implanted hard maskGUO YIMIN·Filed 2017·Granted Jan 31, 2023·0 cites·19 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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