Assignee
GLOBALFOUNDRIES DRESDEN MOD 1
DE·16 granted patents·7 pending applications·14 citations·filing 2019–2024
Top patents by PatentIndex Score
23 records- 0197US10909298B1Well contact cell with doped tap region separated from active region, and methods to form sameGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Feb 2, 2021·12 cites·20 claims
- 0284US11315949B2Charge-trapping sidewall spacer-type non-volatile memory device and methodGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0369US11984503B2High-voltage devices integrated on semiconductor-on-insulator substrateGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Granted May 14, 2024·0 cites·15 claims
- 0466US12574030B2Device with inverter functionality and tunable trigger voltageGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 0564US2023395605A1Reconfigurable complementary metal oxide semiconductor device and methodGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2023·Application pending·0 cites
- 0661US11817457B2Reconfigurable complementary metal oxide semiconductor device and methodGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2021·Granted Nov 14, 2023·0 cites·19 claims
- 0761US2025380425A1Bipolar transistor with ferroelectric materialGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2024·Application pending·0 cites
- 0859US11495660B2Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors with defect prevention structuresGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 0958US12268019B2Ferroelectric field-effect transistors with a hybrid wellGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 1057US12159935B2Structures for a ferroelectric field-effect transistor and related methodsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Granted Dec 3, 2024·0 cites·18 claims
- 1155US11907623B2Chip module structure and method and system for chip module design using chip-package co-optimizationGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 1255US11289598B2Co-integrated high voltage (HV) and medium voltage (MV) field effect transistorsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Mar 29, 2022·0 cites·17 claims
- 1355US2025194098A1Structure with ferroelectric memory stacks having different switching voltages and related methodsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2023·Application pending·0 cites
- 1451US11557421B2Integrated circuit structure with dielectric material to cover horizontally separated metal layers, and related methodGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Jan 17, 2023·0 cites·14 claims
- 1549US2025072125A1Structure with guard ring between terminals of single photon avalanche diode photodetector and related methodGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2023·Application pending·0 cites
- 1649US2024364287A1Structure with differential amplifiers having input offset and related methodsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2023·Application pending·0 cites
- 1747US11610999B2Floating-gate devices in high voltage applicationsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 1847US2023402555A1Reflective semiconductor device with mirror elements having two oxide layers over aluminum layer, and related methodGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Application pending·0 cites
- 1946US11869563B2Memory circuits employing source-line and/or bit-line-applied variable programming assist voltagesGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2021·Granted Jan 9, 2024·0 cites·18 claims
- 2045US11889701B2Memory cell including polarization retention member(s) including antiferroelectric layer over ferroelectric layerGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 2145US11398568B2Ferroelectric based transistorsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 2244US2024243713A1Circuit and method for measuring and correcting signal offset at two pointsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2023·Application pending·0 cites
- 2339US11056561B2Silicided source/drain terminals for field-effect transistorsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
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