Assignee
GLASS GLENN A
US·9 granted patents·238 citations·filing 2011–2012
Top patents by PatentIndex Score
9 records- 0198US9117791B2Selective germanium P-contact metalization through trenchGLASS GLENN A·Filed 2011·Granted Aug 25, 2015·38 cites·22 claims
- 0297US9728464B2Self-aligned 3-D epitaxial structures for MOS device fabricationGLASS GLENN A·Filed 2012·Granted Aug 8, 2017·28 cites·30 claims
- 0397US9437691B2Column IV transistors for PMOS integrationGLASS GLENN A·Filed 2011·Granted Sep 6, 2016·18 cites·25 claims
- 0497US9153583B2III-V layers for N-type and P-type MOS source-drain contactsGLASS GLENN A·Filed 2011·Granted Oct 6, 2015·28 cites·25 claims
- 0597US9012284B2Nanowire transistor devices and forming techniquesGLASS GLENN A·Filed 2012·Granted Apr 21, 2015·37 cites·28 claims
- 0697US8994104B2Contact resistance reduction employing germanium overlayer pre-contact metalizationGLASS GLENN A·Filed 2011·Granted Mar 31, 2015·41 cites·23 claims
- 0796US9059024B2Self-aligned contact metallization for reduced contact resistanceGLASS GLENN A·Filed 2011·Granted Jun 16, 2015·25 cites·25 claims
- 0893US8957476B2Conversion of thin transistor elements from silicon to silicon germaniumGLASS GLENN A·Filed 2012·Granted Feb 17, 2015·16 cites·16 claims
- 0988US10535735B2Contact resistance reduced P-MOS transistors employing Ge-rich contact layerGLASS GLENN A·Filed 2012·Granted Jan 14, 2020·7 cites·24 claims
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