Assignee

EPSILON LP

US·2 granted patents·146 citations·filing 1987–1988

Technology mixC30B2 Y10S1

Top patents by PatentIndex Score

2 records

0194US4789771AMethod and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatusEPSILON LP·Filed 1987·Granted Dec 6, 1988·110 cites·20 claims
0285US4874464AProcess for epitaxial deposition of siliconEPSILON LP·Filed 1988·Granted Oct 17, 1989·36 cites·21 claims

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