Assignee
CERMET INC
US·7 granted patents·5 pending applications·4,312 citations·filing 1996–2007
Top patents by PatentIndex Score
12 records- 0194US7105868B2High-electron mobility transistor with zinc oxideCERMET INC·Filed 2003·Granted Sep 12, 2006·4.1k cites·17 claims
- 0291US5863326APressurized skull crucible for crystal growth using the Czochralski techniqueCERMET INC·Filed 1997·Granted Jan 26, 1999·133 cites·50 claims
- 0373US6887736B2Method of forming a p-type group II-VI semiconductor crystal layer on a substrateCERMET INC·Filed 2003·Granted May 3, 2005·15 cites·28 claims
- 0473US5900060APressurized skull crucible apparatus for crystal growth and related system and methodsCERMET INC·Filed 1996·Granted May 4, 1999·33 cites·48 claims
- 0572US6936101B2Semi-insulating bulk zinc oxide single crystalCERMET INC·Filed 2003·Granted Aug 30, 2005·9 cites·14 claims
- 0667US7176054B2Method of forming a p-type group II-VI semiconductor crystal layer on a substrateCERMET INC·Filed 2004·Granted Feb 13, 2007·9 cites·27 claims
- 0762US7525128B2Zinc-oxide-based double-heterostructure light-emitting diodeCERMET INC·Filed 2006·Granted Apr 28, 2009·2 cites·31 claims
- 0854US2007126015A1Semi-Insulating Bulk Zinc Oxide Single CrystalCERMET INC·Filed 2007·Application pending·0 cites
- 0951US2005269565A1Semi-insulating bulk zinc oxide single crystalCERMET INC·Filed 2005·Application pending·0 cites
- 1043US2006049425A1Zinc-oxide-based light-emitting diodeCERMET INC·Filed 2005·Application pending·0 cites
- 1139US2007111372A1Methods of forming a p-type group ii-vi semiconductor crystal layer on a substrateCERMET INC·Filed 2006·Application pending·0 cites
- 1239US2006018816A1Diluted magnetic semiconducting ZnO single crystalCERMET INC·Filed 2005·Application pending·0 cites
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