Reaction chamber and semi-conductor processing device

Abstract

A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring ( 21 ) made of a magnetic insulation material and an insulating ring ( 22 ) made of an insulating material; the Faraday shielding ring ( 21 ) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring ( 21 ) and the insulating ring ( 22 ) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring ( 21 ) is stacked on the insulating ring ( 22 ) in a vertical direction. A shielding ring ( 211 ) is disposed surrounding an inner peripheral wall of the insulating ring ( 22 ), the shielding ring ( 211 ) is connected to an area of a lower surface of the Faraday shielding ring ( 21 ) adjacent to a center of the reaction chamber, and the shielding ring ( 211 ) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction. The reaction chamber and the semiconductor processing device can not only avoid or reduce the risk of sparking, but also reduce the pollution of the reaction chamber caused by the flaking off of metal particles; and in addition, it is possible to increase an inner diameter and an available space of the reaction chamber.

What is claimed is: 
     
       1. A reaction chamber, comprising: a Faraday shielding ring made of a magnetic insulation material and an insulating ring made of an insulating material, the Faraday shielding ring being provided with a slot thereon passing through a ring surface thereof in an axial direction, both the Faraday shielding ring and the insulating ring being disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring being stacked on the insulating ring in a vertical direction, wherein, a shielding ring is disposed surrounding an inner peripheral wall of the insulating ring, the shielding ring is connected to an area of a lower surface of the Faraday shielding ring adjacent to a center of the reaction chamber, and the shielding ring is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface of the shielding ring in an axis direction. 
     
     
       2. The reaction chamber according to  claim 1 , wherein a projection of the slot of the shielding ring coincides with a projection of the slot of the Faraday shielding ring on a plane perpendicular to a central axis of the reaction chamber. 
     
     
       3. The reaction chamber according to  claim 1 , wherein the shielding ring and the Faraday shielding ring are coaxially disposed and inner diameters of the shielding ring and the Faraday shielding ring are identical. 
     
     
       4. The reaction chamber according to  claim 1 , wherein a horizontal spacing in a horizontal direction exists between an outer peripheral wall of the shielding ring and the inner peripheral wall of the insulating ring. 
     
     
       5. The reaction chamber according to  claim 4 , wherein the horizontal spacing is ranged from 1 mm to 2 mm. 
     
     
       6. The reaction chamber according to  claim 1 , wherein an edge area of the lower surface of the Faraday shielding ring distal to the center of the reaction chamber is provided with a protrusion protruding downwards and the protrusion contacts an upper surface of the insulating ring, such that the Faraday shielding ring is stacked on the upper surface of the insulating ring. 
     
     
       7. The reaction chamber according to  claim 1 , wherein the upper surface and/or the inner peripheral wall of the insulating ring and/or an inner peripheral wall of the Faraday shielding ring and/or an inner peripheral wall of the shielding ring are treated by a roughening process. 
     
     
       8. The reaction chamber according to  claim 1 , further comprising a lining member which is disposed surrounding the inner peripheral wall of the reaction chamber at a bottom area of the reaction chamber, wherein a longitudinal section of the lining member is of a stepped shape, and the insulating ring is stacked on an upper step surface of the lining member. 
     
     
       9. The reaction chamber according to  claim 8 , wherein an inner diameter of the shielding ring is larger than an inner diameter of the upper step surface of the lining member, and a lower surface of the shielding ring is higher than a lower surface of the insulating ring, such that the shielding ring does not contact the upper step surface of the lining member. 
     
     
       10. The reaction chamber according to  claim 8 , wherein an outer diameter of the shielding ring is smaller than an inner diameter of the upper step surface of the lining member, and a lower surface of the shielding ring and a lower surface of the insulating ring are in a same horizontal plane. 
     
     
       11. The reaction chamber according to  claim 1 , wherein the shielding ring and the Faraday shielding ring are integrally formed. 
     
     
       12. A semiconductor processing device, comprising the reaction chamber according to  claim 1 .