Semiconductor device and manufacturing method

Abstract

A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.

What is claimed is: 
     
       1. A semiconductor device, comprising:
 a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body; wherein 
 from each side of opposing two sides within each of the first and second zones, a number of n (n≧1) first subzones of a second conductivity type different from the first conductivity type and a number of n−1 third subzones of the first conductivity type are alternately arranged within the respective zone along a lateral direction extending parallel to a surface of the semiconductor body, a second semiconductor subzone being formed between the number of n first subzones and n−1 third subzones on one side and the number of n first subzones and n−1 third subzones on the other side; and wherein 
 an average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein
 each of the third subzones constitutes a further drift zone. 
 
     
     
       3. The semiconductor device of  claim 1 , wherein
 a lateral dimension of the drift zone between the first and second zones is larger than the lateral dimension of the second semiconductor subzone. 
 
     
     
       4. The semiconductor device of  claim 1 , wherein
 a bottom side of each of the first and second semiconductor subzones adjoins a top side of a third semiconductor zone of the first conductivity type. 
 
     
     
       5. An integrated circuit, comprising the semiconductor device of  claim 1 .