Light emitting device, light emitting device package including the same and lighting system

Abstract

Disclosed is a light emitting device including a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode disposed on the first conductive type semiconductor layer, a second electrode disposed on the second conductivity type semiconductor layer, and a low temperature oxide film disposed on the light emitting structure, with an irregular thickness.

What is claimed is: 
     
       1. A light emitting device comprising:
 a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; 
 a first electrode disposed on the first conductive type semiconductor layer; 
 a second electrode disposed on the second conductivity type semiconductor layer; and 
 a low temperature oxide film disposed on the light emitting structure, with an irregular thickness, 
 wherein the low temperature oxide film comprises a first layer and a second layer, the first layer being disposed on an entire top surface of the light emitting structure and having a uniform thickness, and the second layer being disposed on an entire top surface of the first layer and having an irregular thickness. 
 
     
     
       2. The light emitting device according to  claim 1 , wherein unevenness is formed on a surface of the low temperature oxide film. 
     
     
       3. The light emitting device according to  claim 1 , wherein the low temperature oxide film is disposed at least one of a surface of the first conductive type semiconductor layer and a surface of the second conductive type semiconductor layer. 
     
     
       4. The light emitting device according to  claim 1 , further comprising:
 a passivation layer disposed on a lateral surface of the light emitting structure. 
 
     
     
       5. The light emitting device according to  claim 4 , wherein the passivation layer is in contact with a lateral surface and a portion of a top surface of the low temperature oxide film, and
 wherein another portion of the surface of the low temperature oxide film is opened. 
 
     
     
       6. The light emitting device according to  claim 4 , wherein the passivation layer comprises at least one selected from the group consisting of a silicon oxide (SiO 2 ) layer, an oxinitride layer, an aluminum oxide layer and a nitride layer. 
     
     
       7. The light emitting device according to  claim 1 , wherein the low temperature oxide film is formed on at least two layers. 
     
     
       8. The light emitting device according to  claim 1 , wherein the thickness of the first layer is different from that of the second layer. 
     
     
       9. The light emitting device according to  claim 1 , wherein at least one of the thickness of the first or the thickness of the second layers is 1 micrometer to 5 micrometers. 
     
     
       10. The light emitting device according to  claim 1 , wherein the low temperature oxide film comprises a transmissive material. 
     
     
       11. The light emitting device according to  claim 1 , wherein the low temperature oxide film comprises silicon oxide. 
     
     
       12. The light emitting device according to  claim 1 , wherein the low temperature oxide film is deposited at 400° C. to 450° C. 
     
     
       13. The light emitting device according to  claim 1 , wherein the thickness of the low temperature oxide film is 1 micrometer to 10 micrometers. 
     
     
       14. The light emitting device according to  claim 4 , wherein a material composing the passivation layer is different from a material composing the low temperature oxide. 
     
     
       15. A lighting system comprising:
 a light emitting device package comprising:
 a package body; 
 a first lead frame and a second lead frame disposed on the package body; and 
 a light emitting device disposed on the package body, to be electrically connected with the first lead frame and the second lead frame, the light emitting device comprising a light emitting structure comprising:
 a first conductive type semiconductor layer; 
 an active layer and a second conductive type semiconductor layer; 
 a first electrode disposed on the first conductive type semiconductor layer; 
 a second electrode disposed on the second conductive type semiconductor layer; and 
 a low temperature oxide film disposed on the light emitting structure, with an uneven thickness, 
 wherein the low temperature oxide film comprises a first layer and a second layer, the first layer being disposed on an entire top surface of the light emitting structure and having a uniform thickness, and the second layer being disposed on an entire top surface of the first layer and having an irregular thickness; 
 
 
 a circuited board on which the light emitting device package is connectedly disposed; and 
 an optical member to transmit light emitted from the light emitting device package. 
 
     
     
       16. The lighting system according to  claim 15 , wherein the low temperature oxide film is disposed on the molding part. 
     
     
       17. The lighting system according to  claim 15 , further comprising:
 a phosphor layer coated on the light emitting device, 
 wherein the low temperature oxide film is disposed on a surface of the phosphor layer. 
 
     
     
       18. The a lighting system according to  claim 15 , further comprising:
 a lens disposed on the molding part, 
 wherein the low temperature oxide film is disposed on the lens. 
 
     
     
       19. The lighting system according to  claim 15 , wherein a top surface of the second layer has a pattern, and the pattern has an irregular height from a top surface of the first layer. 
     
     
       20. The light emitting device according to  claim 1 , wherein a top surface of the second layer has a pattern, and the pattern has an irregular height from a top surface of the first layer.