P
US7420266B2ExpiredUtilityPatentIndex 84

Circuit device and manufacturing method thereof

Assignee: SANYO ELECTRIC COPriority: Sep 30, 2003Filed: Sep 29, 2004Granted: Sep 2, 2008
Est. expirySep 30, 2023(expired)· nominal 20-yr term from priority
Inventors:TAKAHASHI KOUJI
H10W 90/756H10W 90/754H10W 90/736H10W 90/734H10W 74/00H10W 72/5475H10W 72/5449H10W 72/5363H10W 72/932H10W 72/926H10W 72/884H10W 72/552H10W 72/536H10W 72/0198H10W 90/811H10W 74/111H10W 70/042H05K 1/187H05K 2203/0353H05K 2203/1476H05K 3/202H05K 2203/0369H05K 1/02
84
PatentIndex Score
18
Cited by
8
References
13
Claims

Abstract

Provided is a circuit device having conductive patterns which are equally spaced apart and a manufacturing method thereof. A method for manufacturing a circuit device of the present invention includes the steps of: preparing a conductive foil; forming conductive patterns, which are included in a unit having at least regions for mounting circuit elements, by forming isolation trenches having a uniform width in the conductive foil; electrically connecting the conductive patterns to the circuit elements; sealing with a sealing resin so as to cover the circuit elements and to be filled in the isolation trenches; and removing the conductive foil in its thickness portions where no isolation trenches are provided.

Claims

exact text as granted — not AI-modified
1. A circuit device having top, side, and bottom surfaces, the circuit device comprising:
 conductive patterns separated by isolation trenches, each conductive pattern comprising a respective upper surface facing the top surface of the circuit device and a respective lower surface facing the bottom surface of the circuit device; 
 circuit elements comprising terminals electrically connected to the conductive patterns; and 
 a sealing resin covering the conductive patterns, the circuit elements, the upper surface and the side surfaces and not covering back sides of the conductive patterns, wherein the sealing resin disposed in the isolation trenches projects downward from the lower surface of the conductive patterns; 
 wherein the conductive patterns are equally separated by the isolation trenches and wherein the circuit device is hexahedral and all surfaces except for the bottom surface comprise the sealing resin. 
 
     
     
       2. The circuit device according to  claim 1 , wherein a distance between the conductive patterns is greater than 150 μm. 
     
     
       3. The circuit device according to  claim 1 , wherein the isolation trenches are formed to have a uniform depth. 
     
     
       4. The circuit device according to  claim 1 , wherein all the conductive patterns are equally spaced apart. 
     
     
       5. The circuit device according to  claim 1 , wherein the conductive patterns include a die pad on which a semiconductor element is die bonded and a distance between the die pad and each of the other neighboring conductive patterns is longer than a distance between each of the other conductive patterns. 
     
     
       6. The circuit device according to  claim 5 , wherein the semiconductor element is a power system semiconductor element. 
     
     
       7. A circuit device having top, side, and bottom surfaces, the circuit device comprising:
 conductive patterns isolated from each other by isolation trenches formed by etching; 
 circuit elements comprising terminals electrically connected to the conductive patterns; and 
 a sealing resin covering the conductive patterns, the circuit elements, the upper surface, and the side surfaces and not covering back sides of the conductive patterns; 
 wherein the depth of the isolation trench is substantially uniform and wherein the circuit device is hexagonal and all surfaces except for the bottom surface comprising the sealing resin; and 
 wherein each conductive pattern comprises a respective upper surface facing the top surface of the circuit device and a respective lower surface facing the bottom surface of the circuit device and further wherein the sealing resin disposed in the isolation trenches projects downward from the lower surface of the conductive patterns. 
 
     
     
       8. The circuit device according to  claim 7 , wherein the width of the isolation trench is made to be not less than 150 μm. 
     
     
       9. The circuit device according to  claim 7 , wherein the isolation trenches are formed to have equal widths. 
     
     
       10. The circuit device according to one of  claims 1  and  7  comprising thin metallic wire coupled between the terminals and the conductive patterns. 
     
     
       11. The circuit device according to one of  claims 1  and  7  wherein the conductive patterns comprise die pads to implement the circuit elements and bonding pads connected to the terminals through thin metallic wire. 
     
     
       12. The circuit device according to  claim 1  wherein the shortest distance between each pair of adjacent conductive patterns is substantially constant. 
     
     
       13. The circuit device according to  claim 7  wherein the shortest distance between each pair of adjacent conductive patterns is substantially constant.

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