US2016377918A1PendingUtilityA1

Liquid Crystal Display Device

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Assignee: SEMICONDUCTOR ENERGY LABPriority: Mar 1, 2002Filed: Sep 13, 2016Published: Dec 29, 2016
Est. expiryMar 1, 2022(expired)· nominal 20-yr term from priority
G02F 1/133555G02F 2201/123G02F 1/134309G02F 1/1368G02F 1/136227G02F 1/13439H10D 86/481H10D 86/60H10D 30/673H01L 29/42384H01L 27/1255G02F 1/1335
63
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Claims

Abstract

It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a thin-film transistor formed over a substrate;   an insulating film over the thin-film transistor;   an interconnection and a plurality of island-like conductive films over the insulating film; and   a transparent conductive film over the interconnection and the plurality of island-like conductive films.   
     
     
         3 . A semiconductor device according to  claim 2 , wherein the plurality of island-like conductive films each have a pattern end having a taper angle of 5-60 degrees. 
     
     
         4 . A semiconductor device according to  claim 2 , wherein the plurality of island-like conductive films have an area ratio of 50-90% of an area occupied by the transparent conductive film. 
     
     
         5 . A semiconductor device according to  claim 2 , wherein the semiconductor device is incorporated into an electronic apparatus selected from the group consisting of a digital still camera, a notebook personal computer, a mobile computer, a portable type image reproducing apparatus having a recording medium, a video camera and a cellular phone. 
     
     
         6 . A semiconductor device according to  claim 2 , wherein the transparent conductive film is a pixel electrode. 
     
     
         7 . A semiconductor device according to  claim 2 , wherein the plurality of island-like conductive films are irregularly arranged. 
     
     
         8 . A semiconductor device comprising:
 a thin-film transistor formed over a substrate;   an insulating film over the thin-film transistor;   an interconnection and a plurality of island-like conductive films over the insulating film; and   a transparent conductive film over the interconnection and the plurality of island-like conductive films,   wherein the thin-film transistor and the transparent conductive film are electrically connected via the interconnection.   
     
     
         9 . A semiconductor device according to  claim 8 , wherein the plurality of island-like conductive films each have a pattern end having a taper angle of 5-60 degrees. 
     
     
         10 . A semiconductor device according to  claim 8 , wherein the plurality of island-like conductive films have an area ratio of 50-90% of an area occupied by the transparent conductive film. 
     
     
         11 . A semiconductor device according to  claim 8 , wherein the semiconductor device is incorporated into an electronic apparatus selected from the group consisting of a digital still camera, a notebook personal computer, a mobile computer, a portable type image reproducing apparatus having a recording medium, a video camera and a cellular phone. 
     
     
         12 . A semiconductor device according to  claim 8 , wherein the transparent conductive film is a pixel electrode. 
     
     
         13 . A semiconductor device according to  claim 8 , wherein the plurality of island-like conductive films are irregularly arranged. 
     
     
         14 . A semiconductor device comprising:
 a thin-film transistor formed over a substrate;   an insulating film over the thin-film transistor;   an interconnection and a plurality of island-like conductive films over the insulating film; and   a transparent conductive film over the interconnection and the plurality of island-like conductive films,   wherein the thin-film transistor and the transparent conductive film are electrically connected via the interconnection, and   wherein the interconnection is formed from a same layer as the plurality of island-like conductive films.   
     
     
         15 . A semiconductor device according to  claim 14 , wherein the plurality of island-like conductive films each have a pattern end having a taper angle of 5-60 degrees. 
     
     
         16 . A semiconductor device according to  claim 14 , wherein the plurality of island-like conductive films have an area ratio of 50-90% of an area occupied by the transparent conductive film. 
     
     
         17 . A semiconductor device according to  claim 14 , wherein the semiconductor device is incorporated into an electronic apparatus selected from the group consisting of a digital still camera, a notebook personal computer, a mobile computer, a portable type image reproducing apparatus having a recording medium, a video camera and a cellular phone. 
     
     
         18 . A semiconductor device according to  claim 14 , wherein the transparent conductive film is a pixel electrode. 
     
     
         19 . A semiconductor device according to  claim 14 , wherein the plurality of island-like conductive films are irregularly arranged.

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