Manufacturing method of semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

What is claimed is: 
     
         1 . A method for manufacturing an oxide semiconductor film having conductivity, comprising the steps of:
 forming an oxide semiconductor film over a substrate;   applying a first heat treatment to the oxide semiconductor film to make the oxide semiconductor film including defects;   exposing a surface of the oxide semiconductor film to a solution containing boron, phosphorus, an alkali metal, or an alkaline earth metal; and   applying a second heat treatment to the oxide semiconductor film to form the oxide semiconductor film having conductivity after the first heat treatment.   
     
     
         2 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 1 , wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×10 20  atoms/cm 3 . 
     
     
         3 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 1 , wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10 −3  Ω·cm and less than 1×10 4  Ω·cm. 
     
     
         4 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 1 , wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°. 
     
     
         5 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 1 , wherein the oxide semiconductor film having conductivity includes at least one of an In—Ga oxide, an In—Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd). 
     
     
         6 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 1 , further comprising forming a resistor, the resistor comprising the oxide semiconductor film having conductivity. 
     
     
         7 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 1 , further comprising forming a capacitor, the capacitor comprising the oxide semiconductor film having conductivity as an electrode. 
     
     
         8 . A method for manufacturing an oxide semiconductor film having conductivity, comprising the steps of:
 forming an oxide semiconductor film over a substrate;   adding a rare gas to the oxide semiconductor film by a doping method or an ion implantation method;   exposing a surface of the oxide semiconductor film to a solution containing boron, phosphorus, an alkali metal, or an alkaline earth metal;   applying a heat treatment to the oxide semiconductor film to form the oxide semiconductor film having conductivity after the first heat treatment.   
     
     
         9 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 8 , wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×10 20  atoms/cm 3 . 
     
     
         10 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 8 , wherein the rare gas is at least one of helium, neon, argon, krypton, and xenon. 
     
     
         11 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 8 , wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×10 −3  Ω·cm and less than 1×10 4  Ω·cm. 
     
     
         12 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 8 , wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −30° and less than or equal to 30°. 
     
     
         13 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 8 , wherein the oxide semiconductor film having conductivity includes at least one of an In—Ga oxide, an In—Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd). 
     
     
         14 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 8 , further comprising forming a resistor, the resistor comprising the oxide semiconductor film having conductivity. 
     
     
         15 . The method for manufacturing an oxide semiconductor film having conductivity according to  claim 8 , further comprising forming a capacitor, the capacitor comprising the oxide semiconductor film having conductivity as an electrode.