Methods of Forming Capacitors

Abstract

A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

1 . A method of forming capacitors, comprising:
 forming support material over a substrate;   forming a first capacitor electrode within individual openings in the support material;   first etching only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes;   second etching into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes; and   forming a capacitor dielectric over the outer and inner portions of the sidewalls of the first capacitor electrodes and forming a second capacitor electrode over the capacitor dielectric.   
     
     
         2 . The method of  claim 1  wherein the first etching forms the support material to have a non-planar elevationally outermost surface. 
     
     
         3 . The method of  claim 2  wherein the first etching forms the elevationally outermost surface of the support material to be jagged. 
     
     
         4 . The method of  claim 1  wherein the first etching forms the support material to have a planar elevationally outermost surface. 
     
     
         5 . The method of  claim 1  wherein the first etching exposes less than one-half of all of the sidewalls of the individual first capacitors. 
     
     
         6 . The method of  claim 1  wherein the first etching exposes more than one-half of all of the sidewalls of the individual first capacitors. 
     
     
         7 . The method of  claim 1  wherein the support material surrounds the individual first capacitor electrodes, the second etching removing all remaining of the support material from surrounding the individual first capacitor electrodes. 
     
     
         8 . The method of  claim 1  wherein the support material comprises an elevationally outer material, an elevationally inner material, and an elevationally intermediate material between the outer and inner materials; the intermediate material being of different composition from composition of the outer and inner materials. 
     
     
         9 . The method of  claim 8  wherein the first etching with the liquid etching fluid is conducted isotropically to stop on the intermediate material. 
     
     
         10 . The method of  claim 9  wherein the intermediate material surrounds the individual first capacitor electrodes, and removing all remaining of the intermediate material from surrounding the individual first capacitor electrodes after the first etching. 
     
     
         11 . The method of  claim 9  wherein the intermediate material surrounds the individual first capacitor electrodes, and removing only some of the intermediate material surrounding the individual first capacitor electrodes after the first etching to leave intermediate material as part of a finished circuitry construction that comprises the capacitors. 
     
     
         12 . The method of  claim 1  wherein the individual first capacitor electrodes are formed into conductive electrical connection with respective individual conductive node locations, forming a dielectric material that is elevationally inward of the support material and through which the   
     
     
         13 . The method of  claim 1  comprising forming covering material elevationally over the support material, and anisotropically etching openings through the covering material after forming the first capacitor electrodes and prior to the first etching to expose the support material. 
     
     
         14 . The method of  claim 13  wherein the support material comprises polysilicon. 
     
     
         15 . The method of  claim 13  wherein the support material comprises an elevationally outer material, an elevationally inner material, and an elevationally intermediate material between the outer and inner materials; the intermediate material being of different composition from composition of the outer and inner materials. 
     
     
         16 . The method of  claim 15  wherein the inner and outer materials are of the same composition. 
     
     
         17 . The method of  claim 15  wherein the inner and outer materials are of different compositions. 
     
     
         18 . The method of  claim 1  comprising forming covering material elevationally over the support material, and comprising anisotropically etching openings through the covering material after forming the first capacitor electrodes and prior to the first etching to expose the support material; and
 wherein the individual first capacitor electrodes are formed into conductive electrical connection with respective individual conductive node locations, forming a dielectric material that is elevationally inward of the support material and through which the first capacitor electrodes extend to the node locations. 
 
     
     
         19 . A method of forming capacitors, comprising:
 forming dielectric material elevationally over node locations;   forming support material comprising polysilicon elevationally over the dielectric material;   forming covering material elevationally over the polysilicon-comprising support material;   forming individual openings through the covering, support, and dielectric materials to the node locations;   forming a first capacitor electrode within individual of the openings in conductive electrical connection with the respective node locations;   anisotropically etching openings though the covering material to expose the polysilicon-comprising support material;   first isotropically etching only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes;   after the first isotropic etching, second isotropically etching into the polysilicon-comprising support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes and to stop on the dielectric material; and   forming a capacitor dielectric over the outer and inner portions of the sidewalls of the first capacitor electrodes and forming a second capacitor electrode over the capacitor dielectric.   
     
     
         20 . The method of  claim 19  wherein the support material is homogenous. 
     
     
         21 . The method of  claim 19  wherein the support material is not homogenous. 
     
     
         22 - 24 . (canceled) 
     
     
         25 . The method of  claim 1  wherein the support material comprises amorphous silicon. 
     
     
         26 . The method of  claim 1  wherein the support material comprises monocrystalline silicon.