Semiconductor device

Abstract

A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

1 - 18 . (canceled) 
     
     
         19 . A semiconductor device, comprising a semiconductor chip mounted thereon having: a quadrangular power source bonding pad sectioned into a bonding region; and a probe region, wherein:
 the power source bonding pad has an upper face with a part exposed across the bonding region and the probe region by two openings in a protective film formed in an upper layer of the power source bonding pad;   the bonding region and the probe region of the power source bonding pad are exposed from the two openings respectively;   the power source bonding pad has a slit only in the bonding region between the two openings;   the protective film is formed by covering a periphery of the power source bonding pad; and   an overlapping width of the protective film and the periphery of the power source bonding pad in the bonding region is wider than an overlapping width of the protective film and the periphery of the power source bonding pad in the probe region.