Image pickup apparatus and image pickup system

Abstract

A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements, and that provides a high sensitivity and a low dark current even in a high-speed readout operation, includes a well formed on a wafer, and semiconductor layers formed in the well to constitute photodiodes. A well contact is formed between the semiconductor layers. Element isolation regions are provided between the well contact and the semiconductor layers, and channel stop layers are provided under the element isolation regions. A conductive layer is provided on the element isolation region, and a side wall is provided on a side face of the conductive layer. A distance a between an end of the element isolation region and the conductive layer, a width b of the side wall and a device isolation width c satisfy a relation c>a≧b.

1 .- 13 . (canceled) 
     
     
         14 . A manufacturing method of an image pickup apparatus comprising:
 a first semiconductor region of a first conductivity type;   a photoelectric conversion element having a second semiconductor region of a second conductivity type formed in the first semiconductor region;   a third semiconductor region of the first conductivity type formed in and electrically connected to the first semiconductor region;   an element isolation region provided between the third semiconductor region and the second semiconductor region to surround the third semiconductor region;   a conductive layer provided on the element isolation region;   a fourth semiconductor region of the first conductivity type provided under the element isolation region; and   a side wall positioned at a side of the conductive layer, wherein   a width c of the element isolation region, a width b of the side wall, and a distance a between an end of the element isolation region at a side of the third semiconductor region and an end of the conductive layer at the side of the third semiconductor region satisfy a relation c>a≧b, and wherein   the manufacturing method comprises a step of forming the third semiconductor region by an ion implantation into the first semiconductor region surrounded by the element isolation region, after forming the conductive layer and the side wall.   
     
     
         15 . The manufacturing method according to  claim 14 , wherein
 the third semiconductor region contacts the fourth semiconductor region.   
     
     
         16 . The manufacturing method according to  claim 14 , wherein the image pickup apparatus further comprises a transfer transistor for transferring a carrier accumulated in the second semiconductor region, and wherein the conductive layer forms a part of a gate electrode of the transfer transistor. 
     
     
         17 . A manufacturing method of an image pickup apparatus comprising:
 a first semiconductor region of a first conductivity type;   a photoelectric conversion element having a second semiconductor region of a second conductivity type formed in the first semiconductor region;   a third semiconductor region of the first conductivity type formed in and electrically connected to the first semiconductor region;   an element isolation region provided between the third semiconductor region and the second semiconductor region to surround the third semiconductor region;   a conductive layer provided on the element isolation region;   a fourth semiconductor region of the first conductivity type provided under the element isolation region; and   a side wall positioned at a side of the conductive layer, wherein   the side wall is present on the element isolation region and an external end of the side wall does not exceed an end of the element isolation region, and wherein   the manufacturing method comprises a step of forming the third semiconductor region by an ion implantation into the first semiconductor region surrounded by the element isolation region, after forming the conductive layer and the side wall.   
     
     
         18 . The manufacturing method according to  claim 17 , wherein
 the third semiconductor region contacts the fourth semiconductor region.   
     
     
         19 . The manufacturing method according to  claim 17 , wherein the image pickup apparatus further comprises a transfer transistor for transferring a carrier accumulated in the second semiconductor region, and wherein the conductive layer forms a part of a gate electrode of the transfer transistor.