Monolithic photodetector

Abstract

A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R 1 R 2 R 3 SiOSiR 1 R 2 R 3 where R 1 , R 2 , and R 3 are any carbonaceous or metal substituents and where one of R 1 , R 2 , or R 3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.

1 - 16 . (canceled) 
     
     
         17 . An electronic device, comprising:
 electronic circuitry; and   an image acquisition device coupled to the electronic circuitry, the image acquisition device including a photodetector array having a plurality of photodetectors formed on a substrate, the photodectors being arranged in rows and columns and each photodetector comprising:   a photodiode formed in the substrate;   a waveguide including,   a dielectric layer formed on the photodiode; and   a polymer element formed in the dielectric layer adjacent the photodiode, the polymer element having the general formula R 1 R 2 R 3 SiOSiR 1 R 2 R 3  where R 1 , R 2 , and R 3  are any carbonaceous or metal substituents and where one of R 1 , R 2 , or R 3  is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.   
     
     
         18 . The electronic device of  claim 17  wherein the electronic circuitry comprises at least one of digital camera and video camera circuitry. 
     
     
         19 . The electronic device of  claim 17  wherein the electronic circuitry further comprises at least one of cellular telephone and personal digital assistant circuitry. 
     
     
         20 . A method of forming a photodetector array including a plurality of photodetectors, the method comprising:
 forming a plurality of photodiodes in the substrate, each photodiode being associated with a respective photodetector;   forming a dielectric layer on the substrate and photodiodes;   forming in the dielectric layer adjacent each photodiode an opening, each opening being associated with the adjacent photodetector;   forming in each opening a polymer element, the polymer element and portion of the dielectric adjacent each photodiode forming a respective photodetector, and wherein the polymer element has the general formula R 1 R 2 R 3 SiOSiR 1 R 2 R 3  where R 1 , R 2 , and R 3  are any carbonaceous or metal substituents and where one of R 1 , R 2 , or R 3  is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.   
     
     
         21 . The method of  claim 20  wherein forming in each opening the polymer element comprises forming the quasi-inorganic siloxane polymer elements through a spin-on-glass process. 
     
     
         22 . The method of  claim 20  wherein the polymer elements comprise siloxane polymer elements have an index of refraction of between 1.56 to 1.6 or 1.64 to 1.7, and wherein the dielectric layer comprises silicon oxide having an index of refraction of 1.43.