Apparatus For Fabricating High Temperature Superconducting Film And High Temperature Superconducting Film Fabricated Through Auxiliary Cluster Beam Spraying

Abstract

Disclosed herein is a high temperature superconducting film and an apparatus for fabricating a high temperature superconducting film in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, wherein a high temperature superconducting material is deposited on a substrate in a vapor state by evaporating the high temperature superconducting material, and at the same time, a cluster beam material is formed into gas atoms by heating the cluster beam material charged in a material housing, and the formed gas atoms pass through a nozzle of an inlet of the material housing and then are sprayed and grown on the substrate in the form of the cluster beam, thereby forming pinning centers in the high temperature superconducting film.

1 . An apparatus for fabricating a high temperature superconducting film comprising:
 a vacuum chamber separated from an exterior and connected to a vacuum pump to provide a vacuum condition to the vacuum chamber;   a substrate provided in the chamber;   a crucible spaced apart from the substrate and charged with a high temperature superconducting material which is adapted to evaporate by heating into a vapor state; and   a material housing spaced apart from the substrate and charged with a cluster beam material which is adapted to produce, by heating, gas atoms of the cluster beam material,   wherein the evaporated high temperature superconducting material from the crucible and the gas atoms of the cluster beam material from the material housing are configured to be simultaneously deposited on the substrate to form pinning centers in the high temperature superconducting film depositing on the substrate.   
     
     
         2 . The apparatus as set forth in  claim 1 , wherein the substrate is an oxide single crystal substrate, or a metal substrate on which a buffer layer is deposited. 
     
     
         3 . The apparatus as set forth in  claim 2 , wherein the material housing is provided with a nozzle. 
     
     
         4 . The apparatus as set forth in  claim 3 , wherein the gas atoms of the cluster beam material is formed in a form of plasma by an electromagnetic device disposed around the nozzle. 
     
     
         5 . The apparatus as set forth in  claim 4 , wherein the electromagnetic device includes an induction coil. 
     
     
         6 . The apparatus as set forth in  claim 5 , wherein the gas atoms of the cluster beam material is accelerated by a direct current (DC) high voltage applying device. 
     
     
         7 . The apparatus as set forth in  claim 1 , wherein the high temperature superconducting material is an oxide superconducting compound. 
     
     
         8 . The apparatus as set forth in  claim 7 , wherein the high temperature superconducting material is ABa 2 Cu 3 O 7-x  wherein A is one of Y, Sm, Nd, Gd, Dy and Ho. 
     
     
         9 . The apparatus as set forth in  claim 7 , wherein the cluster beam material is a metal oxide. 
     
     
         10 . The apparatus as set forth in  claim 9 , wherein the cluster beam material is MgO. 
     
     
         11 . A high temperature superconducting film produced in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, comprising:
 a superconducting film formed by evaporating a high temperature superconducting material and subsequently depositing the evaporated high temperature superconducting material on a substrate received in a vacuum chamber; and   pinning centers formed in the superconducting film to increase a critical current density of the superconducting film by a simultaneous application of said forming the superconducting film and spraying and growing a cluster beam material charged in a material housing on the substrate in a form of the cluster beam.   
     
     
         12 . The high temperature superconducting film as set forth in  claim 11 , wherein the cluster beam is configured to pass through a nozzle of an inlet of the housing, and the substrate is an oxide single crystal substrate or a metal substrate on which a buffer layer is deposited. 
     
     
         13 . (canceled) 
     
     
         14 . (canceled) 
     
     
         15 . (canceled) 
     
     
         16 . (canceled) 
     
     
         17 . The high temperature superconducting film as set forth in  claim 11 , wherein the high temperature superconducting material is an oxide superconducting compound. 
     
     
         18 . The high temperature superconducting film as set forth in  claim 17 , wherein the high temperature superconducting material is ABa 2 Cu 3 O 7-x  wherein A is one of Y, Sm, Nd, Gd, Dy and Ho, and the cluster beam material is a metal oxide. 
     
     
         19 . (canceled) 
     
     
         20 . (canceled) 
     
     
         21 . The high temperature superconducting film as set forth in  claim 11 , wherein the pinning centers to be formed in the high temperature superconducting film are in the form of point defects. 
     
     
         22 . The high temperature superconducting film as set forth in  claim 11 , wherein the pinning centers formed in the high temperature superconducting film are grown in the form of nanorods or dislocations. 
     
     
         23 . The apparatus as set forth in  claim 1 , wherein the pinning centers to be formed in the high temperature superconducting film are in the form of point defects. 
     
     
         24 . The apparatus as set forth in  claim 1 , wherein the pinning centers to be formed in the high temperature superconducting film are grown in the form of nanorods or dislocations. 
     
     
         25 . The apparatus as set forth in  claim 1 , wherein the sizes and the density of the pinning centers are controlled by adjusting parameters of depositing the high temperature superconducting material and of producing the gas atoms of the cluster beam material so as to increase the pinning force of magnetic flux lines in the high temperature superconducting film.