US2010142877A1PendingUtilityA1
Electro-optic modulator on rib waveguide
Est. expiryApr 9, 2023(expired)· nominal 20-yr term from priority
G02F 2201/307G02F 1/025
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Abstract
An electro-optic modulator is formed on a silicon-on-insulator (SOI) rib waveguide. An optical field in the modulator is confined by using an electrically modulated microcavity. The microcavity has reflectors on each side. In one embodiment, a planar Fabry-Perot microcavity is used with deep Si/SiO 2 Bragg reflectors. Carriers may be laterally confined in the microcavity region by employing deep etched lateral trenches. The refractive index of the microcavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode formed about the microcavity. In one embodiment, the modulator confines both optical field and charge carriers in a micron-size region.
Claims
exact text as granted — not AI-modified1 . A method comprising:
providing light to a silicon optical resonator; modulating the light in the silicon optical resonator by changing the carrier concentration in the optical resonator to vary its refractive index.
2 . The method of the claim 1 where the light is provided to the silicon optical resonator by an optically coupled waveguide.
3 . The method of claim 1 wherein the optical resonator is a ring resonator.
4 . The method of claim 1 wherein the optical resonator is a Fabry-Perot resonator.
5 . The method of claim 1 wherein the optical resonator is an optical cavity.
6 . The method of claim 1 and further comprising providing a p doped region and an n doped region adjacent to the optical resonator.
7 . The method of claim 6 wherein the doped regions are heavily doped.
8 . The method of claim 7 wherein the heavily doped regions form a p-i-n diode about the resonator.
9 . The method of claim 8 wherein the heavily doped regions are positioned to selectively inject carriers into the optical resonator responsive to a forward bias voltage across the diode and to deplete carriers in the optical resonator responsive to a reverse bias voltage across the diode.
10 . A method comprising:
providing light to a silicon optical resonator; modulating the light in the silicon optical resonator by changing its refractive index.
11 . The method of claim 10 wherein the refractive index is changed by varying the carrier concentration in the optical resonator.
12 . The method of the claim 10 where the light is provided to the silicon optical resonator by an optically coupled waveguide.
13 . The method of claim 10 wherein the optical resonator is a ring resonator.
14 . The method of claim 10 wherein the optical resonator is a Fabry-Perot resonator.
15 . The method of claim 10 wherein the optical resonator is an optical cavity.
16 . The method of claim 10 and further comprising providing a p doped region and an n doped region adjacent to the optical resonator.
17 . The method of claim 16 wherein the doped regions are heavily doped.
18 . The method of claim 17 wherein the heavily doped regions form a p-i-n diode about the resonator.
19 . The method of claim 18 wherein the heavily doped regions are positioned to selectively inject carriers into the optical resonator responsive to a forward bias voltage across the diode and to deplete carriers in the optical resonator responsive to a reverse bias voltage across the diode.
20 . A method comprising:
providing light to a silicon waveguide; modulating the light in the silicon waveguide by varying the refractive index of a silicon optical resonator coupled to the silicon waveguide.
21 . The method of claim 20 wherein the refractive index is varied by changing the carrier concentration in the silicon optical resonator.
22 . The method of claim 21 wherein varying the refractive index changes the coupling efficiency of the silicon optical waveguide to the silicon waveguide.
23 . A method comprising:
providing light to a silicon waveguide; and modulating the light in the silicon waveguide by varying the coupling efficiency of a silicon optical resonator to the silicon waveguide.Cited by (0)
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