Method and apparatus for forming deposited film

Abstract

A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

1 . A method of forming a deposited film, comprising:
 introducing a starting gas into a discharge space in a reaction vessel; and   applying electric power to generate discharge to decompose the starting gas,   wherein, when a self-bias voltage value which is generated at an electrode applied with electric power reaches a preset threshold, at least one of an initial flow rate of the starting gas, an initial film formation temperature and an initial film formation time is increased, so as to change the self-bias voltage value larger in absolute value to another self-bias voltage value than the threshold.   
     
     
         2 . (canceled) 
     
     
         3 . A method of forming a deposited film according to  claim 1 ,
 wherein, when the self-bias voltage value which is generated at an electrode applied with electric power after introduction of the starting gas at an initial flow rate reaches the preset threshold, the initial flow rate is changed to a second flow rate larger than the initial flow rate.   
     
     
         4 . A method of forming a deposited film according to  claim 1 ,
 wherein, when the self-bias voltage value which is generated at an electrode applied with electric power at the initial film formation temperature reaches the preset threshold, the initial film formation temperature is changed to a second film formation temperature higher than the initial film formation temperature.   
     
     
         5 . A method of forming a deposited film according to  claim 1 ,
 wherein, the deposited film is formed for the initial film formation time, and when the self-bias voltage value which is generated at an electrode applied with electric power reaches the preset threshold, the initial film formation time is changed to a second film formation time longer than the initial film formation time.   
     
     
         6 . A method of forming a deposited film for manufacturing a non-single-crystal solar cell, the method comprising:
 introducing a starting gas into a discharge space in a reaction vessel; and   applying electric power to generate discharge to decompose the starting gas,   wherein based on a relation between a self-bias voltage value which is generated at an electrode applied with electric power and a short-circuit current of the non-single-crystal solar cell, a threshold of the self-bias voltage value at which the short-circuit current can be kept in a desired range is set; and   wherein when the self-bias voltage value reaches the threshold, maintenance in the reaction vessel is performed.   
     
     
         7 - 11 . (canceled)