Semiconductor device package having multi-chips with side-by-side configuration and method of the same

Abstract

The present invention provides a semiconductor device package with the die receiving through hole and connecting through hole structure comprising a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad. A die is disposed within the die receiving through hole. An adhesion material is formed under the die and filled in the gap between the die and sidewall of the die receiving though hole. Further, a wire bonding is formed to couple to the bonding pads and the first contact pad. A dielectric layer is formed on the wire bonding, the die and the substrate. A second contact pad is formed at the lower surface of the substrate and under the connecting through hole structure.

1 . A structure of semiconductor device package, comprising:
 a substrate with die receiving through holes and connecting through holes structure;   first contact pads formed on an upper surface of said substrate and second contact pads formed on a lower surface of said substrate, wherein said second contact pads are formed at the edge area of said lower surface;   a first die having first bonding pads and a second die having second bonding pads disposed within said die receiving through holes, respectively;   a wiring circuit formed on said upper surface to coupled between an inter contact pads and said first contact pads, said inter contact pads formed between said first die and second die and located side of said first die;   a first adhesion material formed under said first die and said second die;   a second adhesion material filled in the gap between said first and second die and sidewalls of said die receiving though holes of said substrate;   bonding wires coupled between said first bonding pads and said first contact pads, between said second bonding pads and said first contact pads; and   a dielectric layer formed on said bonding wires, said first die, said second die and said substrate.   
     
     
         2 . The structure in  claim 1 , further comprising a plurality of conductive bumps formed on said lower surface and coupled to said second contact pads. 
     
     
         3 . The structure in  claim 2 , wherein said plurality of conductive bumps can be electrically connected with said first bonding pads and said second bonding pads through said through holes structure. 
     
     
         4 . The structure in  claim 1 , further comprising a metal or conductive layer formed on side walls of said die receiving through hole of said substrate. 
     
     
         5 . The structure in  claim 1 , wherein said connecting through holes is formed to pass through said substrate. 
     
     
         6 . The structure in  claim 1 , wherein said connecting through holes are formed lateral side of said substrate. 
     
     
         7 . The structure in  claim 1 , wherein material of said substrate includes epoxy type FR5, FR4 or BT (Bismaleimide triazine). 
     
     
         8 . The structure in  claim 1 , wherein material of said substrate includes metal, alloy, glass, silicon, ceramic or print circuit board (PCB). 
     
     
         9 . The structure in  claim 8 , wherein said alloy includes alloy 42 (42% Ni-58% Fe) or Kovar (29% Ni-17% Co-54% Fe). 
     
     
         10 . The structure in  claim 1 , wherein material of said first adhesion material and said second adhesion material include Siloxane polymer (SINR), WL5000, rubber, epoxy, liquid compound and polyimide (PI). 
     
     
         11 . The structure in  claim 1 , wherein said connecting through holes are filled with a conductive material. 
     
     
         12 . The structure in  claim 1 , wherein material of said dielectric layer include liquid compound, resin, silicone rubber and epoxy type compound. 
     
     
         13 . The structure in  claim 1 , further comprising a metal layer formed by sputtering and/or electro-plating on back side of said first die and said second die. 
     
     
         14 . The structure in  claim 1 , further comprising wires coupled between said first contact pads formed between said first die and said second die.