Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory

Abstract

A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.

1 . A magneto-resistance effect element, comprising:
 a first magnetization layer of which a magnetization is substantially fixed in one direction;   a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field;   an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the said first magnetic layer and said second magnetic layer; and   a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of said first magnetic layer, said intermediate layer and said second magnetic layer,   wherein said magnetic metallic portions of said intermediate layer contain non-ferromagnetic metal.   
     
     
         2 . The magneto-resistance effect element as set forth in  claim 1 ,
 wherein said non-ferromagnetic metal is at least one selected from the group consisting of Cu, Cr, V, Ta, Nb, Sc, Ti, Mn, Zn, Ga, Ge, Zr, Y, Tc, Re, B, In, C, Si, Sn, Ca, Sr, Ba, Au, Ag, Pd, Pt, Ir, Rh, Ru, Os and Hf.   
     
     
         3 . The magneto-resistance effect element as set forth in  claim 2 ,
 wherein said non-ferromagnetic metal contains at least Cu.   
     
     
         4 . The magneto-resistance effect element as set forth in  claim 1 ,
 wherein said insulating portions of said intermediate layer contain a compound containing at least one of oxygen, nitrogen and carbon.   
     
     
         5 . The magneto-resistance effect element as set forth in  claim 1 ,
 wherein said magnetic metallic portions of said intermediate layer contain at least one of Fe, Co and Ni.   
     
     
         6 . The magneto-resistance effect element as set forth in  claim 1 ,
 wherein said first magnetic layer and said second magnetic layer contain at least one of Fe, Co and Ni.   
     
     
         7 . The magneto-resistance effect element as set forth in  claim 1 ,
 wherein said intermediate layer suppresses an interlayer-coupling between said first magnetic layer and said second magnetic layer.   
     
     
         8 . The magneto-resistance effect element as set forth in  claim 1 ,
 wherein in said intermediate layer, magnetic domain walls formed in said magnetic metallic portions are narrowed to enhance an MR effect of said magneto-resistance effect element.   
     
     
         9 . A magnetic head comprising a magneto-resistance effect element as set forth in  claim 1 . 
     
     
         10 . A magnetic recording/reproducing device comprising a magnetic recording medium and a magnetic head as set forth in  claim 1 . 
     
     
         11 . A magnetic memory comprising a magneto-resistance effect element as set forth in  claim 1 . 
     
     
         12 . A method for manufacturing a magneto-resistance effect element, comprising:
 forming a first magnetization layer of which a magnetization is substantially fixed in one direction;   forming a first metallic layer as magnetic metallic portions on said first magnetization layer;   forming a second metallic layer on said first metallic layer;   applying energy enough to excite atoms onto said second metallic layer and then, oxidizing said second metallic layer to convert said second metallic layer into insulating portions, thereby forming an intermediate layer which contains said insulating portions and said magnetic metallic portions;   forming a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; and   forming a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of said first magnetic layer, said intermediate layer and said second magnetic layer.   
     
     
         13 . A method for manufacturing a magneto-resistance effect element, comprising:
 forming a first magnetization layer of which a magnetization is substantially fixed in one direction;   forming a first metallic layer as magnetic metallic portions on said first magnetization layer;   forming a second metallic layer on said first metallic layer;   oxidizing said second metallic layer to convert said second metallic layer into insulating portions and then, applying energy enough to excite atoms onto said insulating portions, thereby forming an intermediate layer which contains said insulating portions and said magnetic metallic portions;   forming a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; and   forming a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of said first magnetic layer, said intermediate layer and said second magnetic layer.