EUV-lithography apparatus having a chamber for cleaning an optical element

Abstract

There is provided, a system that includes (a) a source of light having a wavelength of less than or equal to about 193 nm, (b) an optical element having a region for directing the light, (c) an arrangement for cleaning the region, and (d) a chamber to accommodate the region during the cleaning.

1 - 32 . (canceled)  
   
   
       33 . A system comprising: 
 a source of light having a wavelength of less than or equal to about 193 nm;    an optical element having a region for directing said light;    an arrangement for cleaning said region; and    a chamber to accommodate said region during said cleaning.    
   
   
       34 . The system of  claim 33 , 
 wherein said arrangement comprises a supply of a gas, and    wherein said chamber comprises an inlet through which said gas is introduced into said chamber for said cleaning.    
   
   
       35 . The system of  claim 34 , wherein said gas is selected from the group consisting of oxygen and argon.  
   
   
       36 . The system of  claim 34 , wherein said chamber further comprises an outlet for said gas.  
   
   
       37 . The system of  claim 33 , wherein said arrangement comprises a device for providing said chamber with an interior atmosphere that is separated from an exterior of said chamber.  
   
   
       38 . The system of  claim 37 , wherein said device comprises a vacuum.  
   
   
       39 . The system of  claim 33 , wherein said arrangement comprises a device that generates a plasma for said cleaning.  
   
   
       40 . The system of  claim 39 , wherein said device is selected from the group consisting of a UV light source and an RF antenna.  
   
   
       41 . The system of  claim 33 , wherein said arrangement comprises a device that produces an electrical voltage for said cleaning.  
   
   
       42 . The system of  claim 33 , wherein said arrangement comprises a mechanical cleaning device for said cleaning.  
   
   
       43 . The system of  claim 33 , wherein said region, when situated in a path of said light, reflects said light.  
   
   
       44 . The system of  claim 43 , wherein said optical element is selected from the group consisting of (a) a mirror, (b) a grid, and (c) a plurality of mirrors.  
   
   
       45 . The system of  claim 43 , wherein said optical element is selected from the group consisting of a plane mirror and a spherical mirror.  
   
   
       46 . A system comprising: 
 a source of light having a wavelength of less than or equal to about 193 nm;    an optical element having a region for directing said light;    a chamber, to accommodate said region, having an inlet through which a gas is introduced into said chamber for cleaning said region; and    a vacuum for providing said chamber with an interior atmosphere that is separated from an exterior of said chamber.    
   
   
       47 . A system comprising: 
 a source of light having a wavelength of less than or equal to about 193 nm;    an optical element having a region for reflecting said light, wherein said optical element is selected from the group consisting of (a) a mirror, (b) a grid, and (c) a plurality of mirrors; and    a chamber, to accommodate said region, having an inlet through which a gas is introduced into said chamber for cleaning said region.