Atomic layer deposition of capacitor dielectric

Abstract

A process of forming a capacitor structure over a semiconductor substrate by atomic layer deposition to achieve uniform thickness in memory cell dielectric layers, particularly where the dielectric layer is formed in a container-type capacitor structure. In accordance with several embodiments of the present invention, a process for forming a capacitor structure over a semiconductor substrate is provided. Other embodiments of the present invention relate to processes for forming memory cell capacitor structures, memory cells, and memory cell arrays. Capacitor structures, memory cells, and memory cell arrays are also provided.

What is claimed is:  
     
         1 . A process for forming a dielectric layer over an electrode layer, said process comprising the acts of: 
 chemisorbing a first precursor over a surface of said electrode layer;    reacting a second precursor with said chemisorbed precursor to form said dielectric layer; and    maintaining a substantially flat temperature distribution across said electrode layer as said first precursor is chemisorbed and said second precursor is reacted with said chemisorbed precursor.    
     
     
         2 . A process for the fabrication of a capacitor formed over a semiconductor substrate comprising: 
 forming a lower electrode layer;    forming a dielectric layer over said lower electrode layer through an atomic layer deposition process where 
 a first precursor is chemisorbed over a surface of said lower electrode layer,  
 a second precursor is reacted with said chemisorbed precursor to form said dielectric layer, and  
 a substantially flat temperature distribution is maintained across said semiconductor substrate as said first precursor is chemisorbed and said second precursor is reacted with said chemisorbed precursor; and  
   forming an upper electrode layer over said dielectric layer.    
     
     
         3 . A process for the fabrication of a capacitor formed over a semiconductor substrate comprising: 
 forming a lower electrode layer;    forming a silicon nitride dielectric layer over said lower electrode layer through an atomic layer deposition process where a silicon-containing precursor is chemisorbed over a surface of said lower electrode layer and a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layer;    maintaining a substantially flat temperature distribution across said semiconductor substrate as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor; and    forming an upper electrode layer over said dielectric layer.    
     
     
         4 . A fabrication process as claimed in  claim 3 , wherein said silicon-containing precursor is selected from SiCl 4 , SiHCl 3 , SiH 2 Cl 2 , Si 2 H 6 , SiCl 6 , and SiH 4 , and combinations thereof and said nitrogen-containing precursor is selected from NH 3 , N 2 H 2  and combinations thereof.  
     
     
         5 . A fabrication process where a capacitor structure is formed over a semiconductor substrate by: 
 forming an insulating layer over said semiconductor substrate;    forming a container in said insulating layer;    forming a lower electrode layer along an inner surface of said container, wherein said lower electrode layer extends beyond said inner surface of said container;    forming a dielectric layer over said lower electrode layer through an atomic layer deposition process where 
 a first precursor is chemisorbed over a surface of said lower electrode layer,  
 a second precursor is reacted with said chemisorbed precursor to form said dielectric layer, and  
 a substantially flat temperature distribution is maintained across said semiconductor substrate as said first precursor is chemisorbed and said second precursor is reacted with said chemisorbed precursor; and  
   forming an upper electrode layer over said dielectric layer.    
     
     
         6 . A process as claimed in  claim 5 , wherein said lower electrode layer extends along an upper surface of said insulating layer.  
     
     
         7 . A process as claimed in  claim 5 , wherein said lower electrode layer extends from said inner surface in the direction of an upper surface of said insulating layer along an extension of said container.  
     
     
         8 . A process as claimed in  claim 5 , wherein said lower electrode layer extends along an upper surface of said insulating layer and from said inner surface in the direction of said upper surface of said insulating layer along an extension of said container.  
     
     
         9 . A fabrication process as claimed in  claim 5 , wherein said dielectric layer is formed on said lower electrode layer.  
     
     
         10 . A fabrication process as claimed in  claim 5 , wherein said lower electrode layer covers the entire inner surface of said container.  
     
     
         11 . A fabrication process as claimed in  claim 5 , wherein said dielectric layer covers the entire lower electrode layer.  
     
     
         12 . A fabrication process as claimed in  claim 5 , wherein said upper electrode layer covers the entire dielectric layer.  
     
     
         13 . A fabrication process as claimed in  claim 5 , wherein said atomic layer deposition process is characterized by a semiconductor substrate temperature of between about 350° C. to about 700° C. and a pressure of about 1 Torr to 120 Torr.  
     
     
         14 . A fabrication process where a capacitor structure is formed over a semiconductor substrate by: 
 forming an insulating layer over said semiconductor substrate;    forming a container in said insulating layer;    forming a lower electrode layer along an inner surface of said container, wherein said lower electrode layer extends beyond said inner surface of said container;    forming a dielectric layer over said lower electrode layer and an upper surface of said insulating layer through an atomic layer deposition process where 
 a first precursor is chemisorbed over a surface of said lower electrode layer and an upper surface of said insulating layer,  
 a second precursor is reacted with said chemisorbed precursor to form said dielectric layer,  
 a substantially flat temperature distribution is maintained across said semiconductor substrate as said first precursor is chemisorbed and said second precursor is reacted with said chemisorbed precursor, and  
 said dielectric layer exhibits uniform thickness across said lower electrode layer and said upper surface of said insulating layer;  
   forming a reoxidized layer over said dielectric layer by subjecting said dielectric layer to a reoxidation process, wherein said dielectric layer is formed such that said uniform thickness is sufficient to prevent oxidation of said lower electrode layer as a result of said reoxidation process; and    forming an upper electrode layer over said reoxidized layer.    
     
     
         15 . A fabrication process as claimed in  claim 14 , wherein said dielectric layer is formed in an atomic layer deposition chamber and said reoxidized layer is formed in said chamber or external to said chamber.  
     
     
         16 . A fabrication process where a capacitor structure is formed over a semiconductor substrate by: 
 forming an insulating layer over said semiconductor substrate;    forming a container in said insulating layer;    forming a lower electrode layer along an inner surface of said container, wherein said lower electrode layer extends beyond said inner surface of said container;    forming a silicon nitride dielectric layer over said lower electrode layer through an atomic layer deposition process where a silicon-containing precursor is chemisorbed over a surface of said lower electrode layer and a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layer;    maintaining a substantially flat temperature distribution across said semiconductor substrate as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor; and    forming an upper electrode layer over said dielectric layer.    
     
     
         17 . A fabrication process as claimed in  claim 16 , wherein said silicon-containing precursor is selected from SiCl 4 , SiHCl 3 , SiH 2 Cl2, Si 2 H 6 , SiCl 6 , and SiH 4 , and combinations thereof and said nitrogen-containing precursor is selected from NH 3 , N 2 H 2  and combinations thereof.  
     
     
         18 . A fabrication process where a capacitor structure is formed over a semiconductor substrate by: 
 forming a BPSG insulating layer over said semiconductor substrate;    forming a container in said BPSG insulating layer;    forming an HSG polysilicon lower electrode layer along an inner surface of said container, wherein said lower electrode layer extends beyond said inner surface of said container;    forming a silicon nitride dielectric layer on said HSG lower electrode layer through an atomic layer deposition process where a silicon-containing precursor is chemisorbed over a surface of said HSG lower electrode layer and a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layer;    maintaining a substantially flat temperature distribution across said semiconductor substrate as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor;    forming a reoxidized layer over said silicon nitride dielectric layer by subjecting said silicon nitride dielectric layer to a reoxidation process;    forming a polysilicon upper electrode layer over said reoxidized layer.    
     
     
         19 . A fabrication process where a capacitor structure of a memory cell is formed by: 
 providing a semiconductor substrate including a semiconductor structure defining a transistor and a pair of transistor node locations;    forming a BPSG insulating layer over said semiconductor substrate;    forming a container in said BPSG insulating layer over one of said transistor node locations;    forming an HSG polysilicon lower electrode layer along an inner surface of said container, wherein said lower electrode layer extends beyond said inner surface of said container;    forming a silicon nitride dielectric layer on said HSG lower electrode layer and over a portion of an upper surface of said BPSG insulating layer through an atomic layer deposition process where 
 said silicon nitride dielectric layer has a thickness of 50 Å or less;  
 a silicon-containing precursor is chemisorbed over a surface of said HSG lower electrode layer and said portion of said upper surface of said BPSG insulating layer,  
 a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layer, a substantially flat temperature distribution is maintained across said semiconductor substrate as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor, and  
 said silicon nitride dielectric layer exhibits uniform thickness across said HSG lower electrode layer and said portion of said upper surface of said BPSG insulating layer;  
   forming a reoxidized layer over said silicon nitride dielectric layer by subjecting said silicon nitride dielectric layer to a reoxidation process, wherein said silicon nitride dielectric layer is formed such that said uniform thickness is sufficient to prevent oxidation of said HSG lower electrode layer as a result of said reoxidation process; and    forming a polysilicon upper electrode layer over said reoxidized layer.    
     
     
         20 . A fabrication process where respective capacitor structures are formed over a plurality of semiconductor substrates in a multiple wafer batch-type furnace by: 
 forming respective insulating layers over said semiconductor substrates;    forming respective containers in said insulating layers;    forming respective lower electrode layers along respective inner surfaces of said containers, wherein said lower electrode layer extends beyond said inner surface of said container;    forming respective dielectric layers over said lower electrode layers through an atomic layer deposition process where 
 a first precursor is chemisorbed over a surface of respective lower electrode layers,  
 a second precursor is reacted with said chemisorbed precursor to form said dielectric layers, and  
 a substantially flat temperature distribution is maintained across said semiconductor substrates as said first precursor is chemisorbed and said second precursor is reacted with said chemisorbed precursor; and  
   forming respective upper electrode layers over said dielectric layers.    
     
     
         21 . A fabrication process where respective capacitor structures are formed over a plurality of semiconductor substrates in a multiple wafer batch-type furnace by: 
 forming respective insulating layers over said semiconductor substrates;    forming respective containers in said insulating layers;    forming respective lower electrode layers along respective inner surfaces of said containers, wherein said lower electrode layer extends beyond said inner surface of said container;    forming respective dielectric layers over said lower electrode layers through an atomic layer deposition process where 
 a first precursor is chemisorbed over a surface of respective lower electrode layers,  
 a second precursor is reacted with said chemisorbed precursor to form said dielectric layers,  
 said dielectric layer exhibits uniform thickness across said lower electrode layer and an upper surface of said insulating layer, and  
 a substantially flat temperature distribution is maintained across said semiconductor substrates as said first precursor is chemisorbed and said second precursor is reacted with said chemisorbed precursor;  
   forming respective reoxidized layers over said dielectric layers by subjecting said dielectric layers to a reoxidation process, wherein said dielectric layers are formed such that said uniform thickness is sufficient to prevent oxidation of said lower electrode layer as a result of said reoxidation process; and    forming respective upper electrode layers over said reoxidized layers.    
     
     
         22 . A fabrication process where respective capacitor structures are formed over a plurality of semiconductor substrates in a multiple wafer batch-type furnace by: 
 forming respective insulating layers over said semiconductor substrates;    forming respective containers in said insulating layers;    forming respective lower electrode layers along respective inner surfaces of said containers, wherein said lower electrode layer extends beyond said inner surface of said container;    forming respective silicon nitride dielectric layers over said lower electrode layers through an atomic layer deposition process where 
 a silicon-containing precursor is chemisorbed over a surface of respective lower electrode layers,  
 a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layers, and  
 a substantially flat temperature distribution is maintained across said semiconductor substrates as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor; and  
   forming respective upper electrode layers over said dielectric layers.    
     
     
         23 . A fabrication process where respective capacitor structures are formed over a plurality of semiconductor substrates in a multiple wafer batch-type furnace by: 
 forming respective BPSG insulating layers over said semiconductor substrates;    forming respective containers in said BPSG insulating layers;    forming respective HSG lower electrode layers along respective inner surfaces of said containers, wherein said lower electrode layer extends beyond said inner surface of said container;    forming respective silicon nitride dielectric layers over said HSG lower electrode layers through an atomic layer deposition process where 
 a silicon-containing precursor is chemisorbed over a surface of respective HSG lower electrode layers,  
 a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layers, and  
 a substantially flat temperature distribution is maintained across said semiconductor substrates as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor;  
   forming respective reoxidized layers over said silicon nitride dielectric layers by subjecting said dielectric layers to a reoxidation process; and    forming respective upper electrode layers over said reoxidized layers.    
     
     
         24 . A fabrication process where respective capacitor structures of an array of memory cells are formed in a multiple wafer batch-type furnace by: 
 providing a plurality of semiconductor substrates including respective semiconductor structures defining a plurality of transistors and respective pairs of transistor node locations;    forming respective BPSG insulating layers over said semiconductor substrates;    forming respective containers in said BPSG insulating layers;    forming respective HSG lower electrode layers along respective inner surfaces of said containers, wherein said lower electrode layer extends beyond said inner surfaces of said containers;    forming respective silicon nitride dielectric layers over said HSG lower electrode layers and a portion of respective upper surfaces of said BPSG insulating layers through an atomic layer deposition process where 
 said dielectric layer has a uniform thickness of 50 Å or less,  
 a silicon-containing precursor is chemisorbed over a surface of respective HSG lower electrode layers and said portions of respective upper surfaces of said BPSG insulating layers,  
 a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layers,  
 a substantially flat temperature distribution is maintained across said semiconductor substrates as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor, and  
 said silicon nitride dielectric layer exhibits uniform thickness across said HSG lower electrode layer and said portion of said upper surface of said BPSG insulating layer;  
   forming respective reoxidized layers over said dielectric layers by subjecting said dielectric layers to a reoxidation process, wherein said dielectric layers are formed such that said uniform thickness is sufficient to prevent oxidation of said lower electrode layer as a result of said reoxidation process; and    forming respective upper electrode layers over said reoxidized layers.    
     
     
         25 . A fabrication process where a memory cell is formed by: 
 providing a semiconductor substrate including a semiconductor structure defining a transistor and a pairs of transistor node locations;    forming an insulating layer over said semiconductor substrate;    forming a container in said insulating layer over one of said transistor node locations;    forming a lower electrode layer along an inner surface of said container, wherein said lower electrode layer extends beyond said inner surface of said container;    forming a silicon nitride dielectric layer over said lower electrode layer and a portion of an upper surface of said insulating layer through an atomic layer deposition process where 
 a silicon-containing precursor is chemisorbed over a surface of said lower electrode layer and said portion of said upper surface of said insulating layer,  
 a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layer,  
 a substantially flat temperature distribution is maintained across said semiconductor substrate as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor, and  
 said silicon nitride dielectric layer exhibits uniform thickness across said lower electrode layer and said portion of said upper surface of said insulating layer;  
   forming a reoxidized layer over said dielectric layer by subjecting said dielectric layer to a reoxidation process, wherein said dielectric layer is formed such that said uniform thickness is sufficient to prevent oxidation of said lower electrode layer as a result of said reoxidation process; and    forming an upper electrode layer over said reoxidized layer.    
     
     
         26 . A fabrication process where an array of memory cells are formed on a semiconductor die by: 
 providing a semiconductor substrate including a semiconductor structure defining a plurality of transistors and respective pairs of transistor node locations;    forming an insulating layer over said semiconductor substrate;    forming respective containers in said insulating layer over selected ones of said transistor node locations;    forming respective lower electrode layers along inner surfaces of selected ones of said containers, wherein said lower electrode layers extend beyond said inner surfaces of said containers;    forming respective silicon nitride dielectric layers over said lower electrode layer and a portion of an upper surface of said insulating layer through an atomic layer deposition process where 
 a silicon-containing precursor is chemisorbed over a surface of said lower electrode layer and said portion of said upper surface of said insulating layer,  
 a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layer,  
 a substantially flat temperature distribution is maintained across said semiconductor substrate as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor, and  
 said silicon nitride dielectric layer exhibits uniform thickness across said lower electrode layer and said portion of said upper surface of said insulating layer;  
   forming a reoxidized layer over said dielectric layer by subjecting said dielectric layer to a reoxidation process, wherein said dielectric layer is formed such that said uniform thickness is sufficient to prevent oxidation of said lower electrode layer as a result of said reoxidation process; and    forming an upper electrode layer over said reoxidized layer.    
     
     
         27 . A fabrication process where an array of memory cells are formed on a plurality of semiconductor die in a multiple wafer batch-type furnace by: 
 providing a plurality of semiconductor substrates including respective semiconductor structures defining a plurality of transistors and respective pairs of transistor node locations;    forming respective insulating layers over said semiconductor substrates;    forming respective containers in said insulating layers over selected ones of said transistor node locations;    forming respective lower electrode layers along inner surfaces of selected ones of said containers, wherein said lower electrode layers extend beyond said inner surfaces of selected ones of said containers;    forming respective silicon nitride dielectric layers over said lower electrode layer and a portion of an upper surface of said insulating layers through an atomic layer deposition process where 
 a silicon-containing precursor is chemisorbed over a surface of said lower electrode layer and said portion of said upper surface of said insulating layer,  
 a nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor to form said silicon nitride dielectric layer,  
 said silicon nitride dielectric layer exhibits uniform thickness across said lower electrode layer and said portion of said upper surface of said insulating layer, and  
 a substantially flat temperature distribution is maintained across said semiconductor substrates as said silicon-containing precursor is chemisorbed and said nitrogen-containing precursor is reacted with said chemisorbed silicon-containing precursor;  
   forming respective reoxidized layers over said dielectric layers by subjecting said dielectric layers to a reoxidation process, wherein said dielectric layers are formed such that said uniform thickness is sufficient to prevent oxidation of said lower electrode layer as a result of said reoxidation process; and    forming respective upper electrode layers over said reoxidized layers.    
     
     
         28 . A fabrication process as claimed in  claim 26 , wherein said dielectric layer has a uniform thickness of 50 Å or less.