Low viscosity precursor compositons and methods for the depositon of conductive electronic features

Abstract

A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.

What is claimed is:  
     
         1 . A metal precursor composition having a viscosity of not greater than 1000 centipoise, comprising: 
 (a) a metal precursor compound; and    (b) a conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25° C. compared to the dry metal precursor compound, wherein the conversion temperature of said metal precursor composition is not greater than about 200° C.    
     
     
         2 . A metal precursor composition as recited in  claim 1 , wherein said viscosity is not greater than about 100 centipoise.  
     
     
         3 . A metal precursor composition as recited in  claim 1 , wherein said viscosity is not greater than about 50 centipoise.  
     
     
         4 . A metal precursor composition as recited in  claim 1 , wherein said metal precursor compound is a silver metal carboxylate compound.  
     
     
         5 . A metal precursor composition as recited in  claim 1 , wherein said metal precursor compound is a silver metal oxide.  
     
     
         6 . A metal precursor composition as recited in  claim 1 , wherein said metal precursor compound is an inorganic silver compound.  
     
     
         7 . A metal precursor composition as recited in  claim 1 , wherein said metal precursor compound is a silver halogenated carboxylate compound.  
     
     
         8 . A metal precursor composition as recited in  claim 1 , wherein said metal precursor compound is silver trifluoroacetate.  
     
     
         9 . A metal precursor composition as recited in  claim 1 , wherein said metal precursor composition comprises at least 40 wt. % percent metal.  
     
     
         10 . A metal precursor composition as recited in  claim 1 , further comprising a crystallization inhibitor.  
     
     
         11 . A metal precursor composition as recited in  claim 1 , further comprising a crystallization inhibitor selected from the group consisting of glycerol, glycolic acid, lactic acid, humectants and surfactants.  
     
     
         12 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent is a liquid that functions as a vehicle for said metal precursor composition.  
     
     
         13 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent is a liquid that functions as a solvent for said metal precursor compound.  
     
     
         14 . Metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent is selected from the group consisting of alcohols, amines, amides, boranes, borohydrates, borohydrides, and organosilanes.  
     
     
         15 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises an alcohol.  
     
     
         16 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises an amine.  
     
     
         17 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises an amide.  
     
     
         18 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises terpineol.  
     
     
         19 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises diethyleneglycol butylether (DEGBE).  
     
     
         20 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises N,N-dimethyl acetamide (DMAc).  
     
     
         21 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises diethyleneglycol butylether (DEGBE) and N,N-dimethyl acetamide (DMAc).  
     
     
         22 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises N,N-dimethyl acetamide (DMAc) and terpineol.  
     
     
         23 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent comprises a palladium compound.  
     
     
         24 . A metal precursor composition as recited in  claim 1 , wherein said conversion reaction inducing agent is selected from the group consisting of palladium acetate, palladium tetra-amine hydroxide, and palladium trifluoroacetate.  
     
     
         25 . A metal precursor composition as recited in  claim 1 , wherein said conversion reducing agent comprises diethyleneglycol butylether (DEGBE) and the molar ratio of DEGBE to said metal precursor compound is from about 0.75 to about 1.25.  
     
     
         26 . A metal precursor composition as recited in  claim 1 , further comprising a vehicle.  
     
     
         27 . A metal precursor composition as recited in  claim 1 , further comprising a solvent wherein said metal precursor compound is dissolved in said solvent.  
     
     
         28 . A metal precursor composition as recited in  claim 1 , further comprising a solvent wherein said metal precursor compound is suspended in said solvent.  
     
     
         29 . A metal precursor composition as recited in  claim 1 , further comprising an aqueous-based solvent.  
     
     
         30 . A metal precursor composition as recited in  claim 1 , further comprising particles.  
     
     
         31 . A metal precursor composition as recited in  claim 1 , further comprising substantially spherical particles.  
     
     
         32 . A metal precursor composition as recited in  claim 1 , further comprising metallic particles.  
     
     
         33 . A metal precursor composition as recited in  claim 1 , further comprising silver metal particles.  
     
     
         34 . A metal precursor composition as recited in  claim 1 , further comprising nanoparticles having a volume median particle size of not greater than 100 nanometers.  
     
     
         35 . A metal precursor composition as recited in  claim 1 , further comprising nanoparticles having a volume median particle size of not greater than about 75 nanometers.  
     
     
         36 . A metal precursor composition as recited in  claim 1 , wherein said precursor composition comprises said conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor compound by at least about 50° C.  
     
     
         37 . A metal precursor composition as recited in  claim 1 , wherein said precursor composition comprises said conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor compound by at least about 100° C.  
     
     
         38 . A metal precursor composition having a viscosity of not greater than about 1000 centipoise, comprising: 
 (a) a silver metal compound;    (b) silver particles; and    (c) a conversion reaction inducing agent in amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25° C. as compared to the dry silver metal compound, wherein said metal precursor composition has a conversion temperature of not greater than about 250° C.    
     
     
         39 . A metal precursor composition as recited in  claim 38 , wherein said silver metal compound is a silver carboxylate compound.  
     
     
         40 . A metal precursor composition as recited in  claim 38 , wherein said conversion reaction inducing agent is an alcohol.  
     
     
         41 . A metal precursor composition as recited in  claim 38 , wherein said conversion reaction inducing agent is ethylene glycol.  
     
     
         42 . A metal precursor composition as recited in  claim 38 , wherein said conversion reaction inducing agent is terpineol.  
     
     
         43 . A metal precursor composition as recited in  claim 38 , wherein said metal precursor composition has a viscosity of not greater than 100 centipoise.  
     
     
         44 . A metal precursor composition as recited in  claim 38 , wherein said particles have a volume median particle size of not greater than 100 nanometers.  
     
     
         45 . A metal precursor composition as recited in  claim 38 , wherein said metal precursor composition has a conversion temperature of not greater than 225° C.  
     
     
         46 . A metal precursor composition as recited in  claim 38 , wherein said metal precursor composition has a conversion temperature of not greater than 200° C.  
     
     
         47 . A method for the fabrication of a conductive feature on a substrate, comprising the steps of: 
 (a) providing a precursor composition comprising a silver metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;    (b) depositing said precursor composition on a substrate; and    (c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 250° C., wherein said conductive feature has a resistivity of not greater than about 10 times the resistivity of the pure bulk silver.    
     
     
         48 . A method as recited in  claim 47 , wherein said feature has a minimum feature size of not greater than about 100 μm.  
     
     
         49 . A method as recited in  claim 47 , wherein said feature has a minimum feature size of not greater than about 75 μm.  
     
     
         50 . A method as recited in  claim 47 , wherein said feature has a minimum feature size of not greater than about 50 μm.  
     
     
         51 . A method as recited in  claim 47 , wherein said feature has a minimum feature size of not greater than about 25 μm.  
     
     
         52 . A method as recited in  claim 47 , wherein said feature has a thickness of at least about 0.05 μm.  
     
     
         53 . A method as recited in  claim 47 , wherein said feature has a thickness of at least about 0.1 μm.  
     
     
         54 . A method as recited in  claim 47 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         55 . A method as recited in  claim 47 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         56 . A method as recited in  claim 47 , wherein said precursor composition further comprises metallic particles.  
     
     
         57 . A method as recited in  claim 47 , wherein said precursor composition further comprises metallic nanoparticles.  
     
     
         58 . A method as recited in  claim 47 , wherein said precursor composition further comprises a palladium compound.  
     
     
         59 . A method as recited in  claim 47 , wherein said deposition step comprises depositing said precursor composition using a tool selected from the group consisting of an ink-jet device, a syringe dispense device, an aerosol jet, an intaglio printer, a roll printer and a sprayer.  
     
     
         60 . A method as recited in  claim 47 , wherein said deposition step comprises depositing said precursor composition using an ink-jet device.  
     
     
         61 . A method as recited in  claim 47 , wherein said conversion temperature is not greater than about 225° C.  
     
     
         62 . A method as recited in  claim 47 , wherein said conversion temperature is not greater than about 200° C.  
     
     
         63 . A method as recited in  claim 47 , wherein said conversion temperature is not greater than about 150° C.  
     
     
         64 . A method as recited in  claim 47 , wherein said heating step comprises heating said precursor composition using a laser.  
     
     
         65 . A method as recited in  claim 47 , wherein said heating step comprises heating said precursor composition in a furnace.  
     
     
         66 . A method as recited in  claim 47 , wherein said heating step comprises heating using an infrared lamp.  
     
     
         67 . A method as recited in  claim 47 , wherein said conductive feature has a resistivity of not greater than about 6 times the pure bulk metal.  
     
     
         68 . A method as recited in  claim 47 , wherein said conductive feature has a resistivity of not greater than about 4 times the pure bulk metal.  
     
     
         69 . A method as recited in  claim 47 , wherein said conductive feature has a resistivity of not greater than about 2 times the pure bulk metal.  
     
     
         70 . A method as recited in  claim 47 , wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, cellulose-based materials (i.e. wood or paper), acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile, butadiene (ABS), flexible fiber board, non-woven polymeric fabric and cloth.  
     
     
         71 . A method for the fabrication of a conductive feature on a substrate, comprising the steps of: 
 (a) providing a precursor composition comprising a metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;    (b) depositing said precursor composition on a substrate; and    (c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150° C., wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal.    
     
     
         72 . A method as recited in  claim 71 , wherein said metal is silver.  
     
     
         73 . A method as recited in  claim 71 , wherein said conductive feature has a resistivity of not greater than about 80 times the resistivity of the bulk metal.  
     
     
         74 . A method as recited in  claim 71 , wherein said conversion temperature is not greater than about 100° C.  
     
     
         75 . A method as recited in  claim 71 , wherein said depositing step comprises depositing said precursor composition using a direct-write tool.  
     
     
         76 . A method as recited in  claim 71 , wherein said depositing step comprises depositing said precursor composition using an ink-jet device.  
     
     
         77 . A method as recited in  claim 71 , wherein said conductive feature has a minimum feature size of not greater than about 200 μm.  
     
     
         78 . A method as recited in  claim 71 , wherein said conductive feature has a minimum feature size of not greater than about 100 μm.  
     
     
         79 . A method for the fabrication of a conductive feature on a substrate, comprising the steps of: 
 (a) providing a precursor composition comprising silver particles, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;    (b) depositing said precursor composition on a substrate; and    (c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150° C., wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal.    
     
     
         80 . A method as recited in  claim 79 , wherein said particles are nanoparticles having an average size of not greater than about 100 nanometers.  
     
     
         81 . A method as recited in  claim 79 , wherein said conductive feature has a resistivity of not greater than about 80 times the resistivity of the bulk metal.  
     
     
         82 . A method as recited in  claim 79 , wherein said conversion temperature is not greater than about 100° C.  
     
     
         83 . A method as recited in  claim 79 , wherein said depositing step comprises depositing said precursor composition using a direct-write tool.  
     
     
         84 . A method as recited in  claim 79 , wherein said depositing step comprises depositing said precursor composition using an ink-jet device.  
     
     
         85 . A method as recited in  claim 79 , wherein said conductive feature has a minimum feature size of not greater than about 200 μm.  
     
     
         86 . A method as recited in  claim 79 , wherein said conductive feature has a minimum feature size of not greater than about 100 μm.  
     
     
         87 . A method for the fabrication of an electronic device, comprising the steps of: 
 (a) providing a substrate comprising at least a first non-linear element disposed on said substrate;    (b) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace contacting said first non-linear element, wherein said precursor trace has a minimum size of not greater than about 200μm; and    (c) heating said deposited precursor composition to a temperature of not greater than about 200° C. to form a conductive feature electrically coupled to said first non-linear element, said conductive feature having a minimum feature size of not greater than about 200 μm and a resistivity of not greater than about 200 times the resistivity of the bulk metal.    
     
     
         88 . A method as recited in  claim 87 , wherein said minimum size of said trace and said conductive feature is not greater than about 100 μm.  
     
     
         89 . A method as recited in  claim 87 , wherein said minimum size of said trace and said conductive feature is not greater than about 75 μm.  
     
     
         90 . A method as recited in  claim 87 , wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 μm.  
     
     
         91 . A method as recited in  claim 87 , wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 μm.  
     
     
         92 . A method as recited in  claim 87 , wherein said conductive feature has a thickness of at least about 0.05 μm.  
     
     
         93 . A method as recited in  claim 87 , wherein said conductive feature has a thickness of at least about 0.1 μm.  
     
     
         94 . A method as recited in  claim 87 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         95 . A method as recited in  claim 87 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         96 . A method as recited in  claim 87 , wherein said heating step comprises heating to a temperature of not greater than about 185° C.  
     
     
         97 . A method as recited in  claim 87 , wherein said heating step comprises heating to a temperature of not greater than about 150° C.  
     
     
         98 . A method as recited in  claim 87 , wherein said heating step comprises heating to a temperature of not greater than about 125° C.  
     
     
         99 . A method as recited in  claim 87 , wherein said substrate is a flexible substrate.  
     
     
         100 . A method as recited in  claim 87 , wherein said substrate is an organic substrate.  
     
     
         101 . A method as recited in  claim 87 , wherein said substrate is a polymer substrate.  
     
     
         102 . A method as recited in  claim 87 , wherein said substrate is a glass substrate.  
     
     
         103 . A method as recited in  claim 87 , wherein said metal precursor composition has a viscosity of not greater than about 50 centipoise.  
     
     
         104 . A method as recited in  claim 87 , wherein said depositing step comprises depositing said precursor composition using an ink-jet device.  
     
     
         105 . A method as recited in  claim 87 , wherein said first non-linear element is selected from the group consisting of a diode, a display pixel and a transistor.  
     
     
         106 . A method as recited in  claim 87 , wherein said first non-linear element is an organic transistor.  
     
     
         107 . A method as recited in  claim 87 , wherein said electronic device is an organic light emitting display.  
     
     
         108 . A method as recited in  claim 87 , wherein said metal is silver.  
     
     
         109 . A method as recited in  claim 87 , wherein said conductive trace has a resistivity of not greater than about 100 times the resistivity of the bulk metal.  
     
     
         110 . A method as recited in  claim 87 , wherein said conductive trace has a resistivity of not greater than about 20 times the resistivity of the bulk metal.  
     
     
         111 . A method as recited in  claim 87 , wherein said conductive trace has a resistivity of not greater than about 10 times the resistivity of the bulk conductor.  
     
     
         112 . A method as recited in  claim 87 , wherein said conductive trace has a resistivity of not greater than about 6 times the resistivity of the bulk conductor.  
     
     
         113 . A method for the fabrication of an electronic component, comprising the steps of: 
 (a) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace, wherein said precursor trace has a minimum size of not greater than about 200 μm;    (b) heating said deposited precursor composition to a temperature of not greater than about 200° C. to form a conductive feature, said conductive feature having a minimum feature size of not greater than about 200 μm and a resistivity of not greater than about 200 times the resistivity of the bulk metal; and    (c) depositing at least a first non-linear element on said substrate, wherein said conductive feature is electrically coupled to said first non-linear element.    
     
     
         114 . A method as recited in  claim 113 , wherein said minimum size of said trace and said conductive feature is not greater than about 100 μm.  
     
     
         115 . A method as recited in  claim 113 , wherein said minimum size of said trace and said conductive feature is not greater than about 75 μm.  
     
     
         116 . A method as recited in  claim 113 , wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 μm.  
     
     
         117 . A method as recited in  claim 113 , wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 μm.  
     
     
         118 . A method as recited in  claim 113 , wherein said conductive feature has a thickness of at least about 0.05 μm.  
     
     
         119 . A method as recited in  claim 113 , wherein said conductive feature has a thickness of at least about 0.1 μm.  
     
     
         120 . A method as recited in  claim 113 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         121 . A method as recited in  claim 113 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         122 . A method as recited in  claim 113 , wherein said heating step comprises heating to a temperature of not greater than about 185° C.  
     
     
         123 . A method as recited in  claim 113 , wherein said heating step comprises heating to a temperature of not greater than about 150° C.  
     
     
         124 . A method as recited in  claim 113 , wherein said substrate is a flexible substrate.  
     
     
         125 . A method as recited in  claim 113 , wherein said substrate is an organic substrate.  
     
     
         126 . A method as recited in  claim 113 , wherein said substrate is a polymer substrate.  
     
     
         127 . A method as recited in  claim 113 , wherein said substrate is a glass substrate.  
     
     
         128 . A method as recited in  claim 113 , wherein said metal precursor composition has a viscosity of not greater than about 50 centipoise.  
     
     
         129 . A method as recited in  claim 113 , wherein said depositing step comprises depositing said precursor composition using an ink-jet device.  
     
     
         130 . A method as recited in  claim 113 , wherein said first non-linear element is selected from the group consisting of a diode, a display pixel and a transistor.  
     
     
         131 . A method as recited in  claim 113 , wherein said first non-linear element is an organic transistor.  
     
     
         132 . A method as recited in  claim 113 , wherein said electronic device is an organic light emitting display.  
     
     
         133 . A method as recited in  claim 113 , wherein said metal is silver.  
     
     
         134 . A method as recited in  claim 113 , wherein said conductive trace has a resistivity of not greater than about 100 times the resistivity of the bulk metal.  
     
     
         135 . A method as recited in  claim 113 , wherein said conductive trace has a resistivity of not greater than about 20 times the resistivity of the bulk metal.  
     
     
         136 . A method as recited in  claim 113 , wherein said conductive trace has a resistivity of not greater than about 10 times the resistivity of the bulk conductor.  
     
     
         137 . A method as recited in  claim 113 , wherein said conductive trace has a resistivity of not greater than about 6 times the resistivity of the bulk conductor.  
     
     
         138 . A method for the fabrication of an interconnect for at least first and second organic-based transistors in an electronic component, comprising the steps of: 
 (a) depositing a silver metal precursor composition onto said substrate using an ink-jet device and in the form of a trace having a minimum size of not greater than about 100 μm; and    (b) heating said deposited precursor composition to a temperature of not greater than 200° C. to form a conductive feature having a minimum feature size of not greater than about 100 μm and a resistivity of not greater than about 10 times the resistivity of bulk silver.    
     
     
         139 . A method as recited in  claim 138 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         140 . A method as recited in  claim 138 , further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.  
     
     
         141 . A method as recited in  claim 138 , wherein said minimum size of said trace and said conductive feature is not greater than about 100 μm.  
     
     
         142 . A method as recited in  claim 138 , wherein said minimum size of said trace and said conductive feature is not greater than about 75 μm.  
     
     
         143 . A method as recited in  claim 138 , wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 μm.  
     
     
         144 . A method as recited in  claim 138 , wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 μm.  
     
     
         145 . A method as recited in  claim 138 , wherein said conductive feature has a thickness of at least about 0.05 μm.  
     
     
         146 . A method as recited in  claim 138 , wherein said conductive feature has a thickness of at least about 0.1 μm.