US2002189643A1PendingUtilityA1
Method and apparatus for cleaning/drying hydrophobic wafers
Priority: Aug 25, 1999Filed: Aug 21, 2002Published: Dec 19, 2002
Est. expiryAug 25, 2019(expired)· nominal 20-yr term from priority
H10P 72/0408H10P 70/15B08B 1/34B08B 3/02B08B 3/04
40
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Claims
Abstract
A method and an apparatus that uses a surfactant to clean a hydrophobic wafer is provided. In a first aspect, the method may clean and dry a wafer without applying pure DI water to the wafer. In a second aspect, the method may clean a wafer by applying pure DI water to the wafer only for a short duration of time such that the DI water application ceases prior to or as soon as a surfactant solution is rinsed from the wafer thereafter the wafer is dried. In a further aspect a hydrophobic wafer is maintained wetted with surfactant as it is transferred between cleaning apparatuses and is rinsed via diluted surfactant or via a brief DI water spray and is thereafter dried.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1 . A method of cleaning a hydrophobic wafer, comprising:
applying a surfactant containing solution to a surface of a hydrophobic wafer in a first cleaning apparatus to thereby form a layer of surfactant on the surface of the hydrophobic wafer; transferring the hydrophobic wafer having the surfactant layer formed thereon to a second cleaning apparatus; rinsing the surface of a hydrophobic wafer with pure DI water in the second cleaning apparatus; and drying the hydrophobic wafer in the second cleaning apparatus; wherein pure DI water is applied to the hydrophobic wafer only in the rinsing step and wherein transferring the hydrophobic wafer to a second cleaning apparatus comprises maintaining a layer of surfactant containing solution on the hydrophobic wafer as the hydrophobic wafer transfers to a second cleaning apparatus.
2 . The method of claim 1 wherein applying a surfactant containing solution to a surface of a hydrophobic wafer in a first cleaning apparatus comprises at least partially submerging the hydrophobic wafer in a tank of fluid that contains a surfactant containing solution.
3 . The method of claim 1 wherein applying a surfactant containing solution to a surface of a hydrophobic wafer in a first cleaning apparatus comprising scrubbing the hydrophobic wafer using the surfactant containing solution in a first scrubber.
4 . The method of claim 1 wherein transferring the hydrophobic wafer to a second cleaning apparatus comprises transferring the hydrophobic wafer to a scrubber.
5 . The method of claim 1 wherein transferring the hydrophobic wafer to a second cleaning apparatus comprises transferring the hydrophobic wafer to a spin-rinse-dryer.
6 . The method of claim 1 wherein the surfactant containing solution comprises a WAKO NCW surfactant.
7 . The method of claim 6 wherein the WAKO NCW surfactant comprises a concentration of 0.01% to 0.1% by volume.
8 . The method of claim 1 wherein rinsing the surface of a hydrophobic wafer with pure DI water in a second cleaning apparatus comprises rinsing the surface of a hydrophobic wafer with pure DI water in a second cleaning apparatus for 5 seconds or less.
9 . The method of claim 1 wherein transferring the hydrophobic wafer to a second cleaning apparatus comprises transferring the hydrophobic wafer to an IPA dryer.
10 . The method of claim 1 wherein drying the hydrophobic wafer comprises Marangoni drying the hydrophobic wafer.
11 . A method of rinsing and drying a hydrophobic wafer, comprising:
placing a hydrophobic wafer in a cleaning apparatus; applying a diluted surfactant to the surface of the hydrophobic wafer within the cleaning apparatus; and drying the hydrophobic wafer within the cleaning apparatus.
12 . The method of claim 11 wherein the diluted surfactant containing solution comprises a concentration of 0.01% to 0.1% surfactant by volume.
13 . The method of claim 11 wherein the diluted surfactant is applied for five seconds or less.
14 . The method of claim 11 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a spin-rinse-dryer.
15 . The method of claim 11 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a scrubber.
16 . The method of claim 11 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a Marangoni dryer and wherein drying the hydrophobic wafer comprises Marangoni drying.
17 . The method of claim 16 wherein the Marangoni dryer comprises a tank containing a surfactant.
18 . The method of claim 16 wherein the Marangoni dryer comprises a spin-rinse-dryer.
19 . A method of rinsing and drying a hydrophobic wafer, comprising:
placing a hydrophobic wafer in a cleaning apparatus; applying a surfactant to the surface of the hydrophobic wafer to form a surfactant layer thereon; spraying pure deionized water on the surface of the hydrophobic wafer; ceasing the deionized water spray as soon as the surfactant layer is rinsed from the surface of the hydrophobic wafer; and drying the hydrophobic wafer.
20 . The method of claim 19 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a spin-rinse-dryer.
21 . The method of claim 19 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a scrubber.
22 . The method of claim 19 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a Marangoni dryer and wherein drying the hydrophobic wafer comprises Marangoni drying.
23 . A method of rinsing and drying a hydrophobic wafer, comprising:
placing a hydrophobic wafer in a cleaning apparatus; applying a surfactant to the surface of the hydrophobic wafer to form a surfactant layer thereon; spraying pure deionized water on the surface of the hydrophobic wafer; ceasing the deionized water spray within five seconds; and drying the hydrophobic wafer.
24 . The method of claim 23 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a spin-rinse-dryer.
25 . The method of claim 23 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a scrubber.
26 . The method of claim 23 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a Marangoni dryer and wherein drying the hydrophobic wafer comprises Marangoni drying.
27 . A method of rinsing and drying a hydrophobic wafer, comprising:
placing a hydrophobic wafer in a cleaning apparatus; applying a surfactant to the surface of the hydrophobic wafer to form a surfactant layer thereon; spraying pure deionized water on the surface of the hydrophobic wafer; ceasing the deionized water spray before the surfactant layer is completely rinsed from the surface of the hydrophobic wafer; and drying the hydrophobic wafer.
28 . The method of claim 27 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a spin-rinse-dryer.
29 . The method of claim 27 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a scrubber.
30 . The method of claim 27 wherein placing a hydrophobic wafer in a cleaning apparatus comprises placing the hydrophobic wafer in a Marangoni dryer and wherein drying the hydrophobic wafer comprises Marangoni drying.Cited by (0)
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