Broadband magnetostatic surface wave devices with customizable frequency response

Abstract

Described is an intrinsically multiplexed magnetostatic surface wave (MSSW) device comprising of a pair of transducers that couple to one or more plurality of ferrite films. In embodiments, the ferrite films may be provided as one or more of a YIG, Nickle Zinc Ferrite, Lithium Ferrite configured to simultaneously provide the MSSW device having an associated plurality of MSSW operational bandwidths. The concepts, structure and technique described herein may be used to provide broadband magnetostatic surface wave devices that employ intrinsic multiplexing techniques which enable customizable frequency responses over broad bandwidths.

What is claimed is: 
     
       1. An intrinsically multiplexed magnetostatic surface wave (MSSW) device, comprising:
 a plurality of ferrite films; and 
 a pair of transducers configured for coupling to the plurality of ferrite films to provide a plurality of MSSW frequency bandwidths simultaneously. 
 
     
     
       2. The device according to  claim 1 , wherein each of the plurality of ferrite films is configured for magnetic biasing using a same externally applied magnetic bias field. 
     
     
       3. The device according to  claim 1 , wherein each of the plurality of ferrite films is configured for magnetic biasing using different externally applied magnetic bias fields. 
     
     
       4. The device according to  claim 1 , wherein the device includes a plurality of additional MSSW devices having transducers that share a common input and output feed. 
     
     
       5. The device according to  claim 1 , wherein the plurality of MSSW frequency bandwidths comprise a cumulative single broad passband or plurality of passbands commensurate with the plurality of ferrite films and/or magnetic bias fields. 
     
     
       6. The device according to  claim 1 , wherein the device comprises a frequency selective limiter, signal-to-noise enhancer, delay line, bandpass filter, bandstop filter, isolator, or combination thereof. 
     
     
       7. The device according to  claim 1 , wherein at least one of the plurality of the ferrite films comprises yttrium iron garnet (YIG) having 4πMs values in the range of 100-3000 Gauss. 
     
     
       8. The device according to  claim 1 , wherein at least one of the plurality of the ferrite films comprises lithium ferrite having 4πMs values in the range of 2000-5000 Gauss. 
     
     
       9. The device according to  claim 1 , wherein at least one of the plurality of the ferrite films comprises nickel zinc ferrite having 4πMs values in the range of 2500-6500 Gauss. 
     
     
       10. The device according to  claim 1 , wherein at least one of the plurality of the ferrite films comprises pure or doped barium hexaferrite. 
     
     
       11. The device according to  claim 1 , further including at least one RF filter within respective sub-bands to reduce sub-band overlap and interference. 
     
     
       12. An intrinsically multiplexed magnetostatic surface wave (MSSW) device, comprising:
 a single ferrite film; 
 a pair of transducers configured for coupling to the ferrite film to provide a plurality of MSSW frequency bandwidths simultaneously under an applied graded magnetic biasing field. 
 
     
     
       13. The device according to  claim 12 , wherein the graded magnetic biasing field comprises a pair of dissimilar permanent magnets having different magnetic field strengths. 
     
     
       14. The device according to  claim 12 , wherein the device includes a plurality of additional MSSW devices having transducers that share a common input and output feed. 
     
     
       15. The device according to  claim 12 , wherein the plurality of MSSW frequency bandwidths comprise a cumulative single broad passband or plurality of passbands commensurate with the ferrite film and/or magnetic bias fields. 
     
     
       16. The device according to  claim 12 , wherein the device comprises a frequency selective limiter, signal-to-noise enhancer, delay line, bandpass filter, bandstop filter, or combination thereof. 
     
     
       17. The device according to  claim 12 , wherein the ferrite film comprises yttrium iron garnet (YIG) having 4πMs values in the range of 100-3000 Gauss. 
     
     
       18. The device according to  claim 12 , wherein the ferrite film comprises lithium ferrite having 4πMs values in the range of 2000-5000 Gauss. 
     
     
       19. The device according to  claim 12 , wherein the ferrite film comprises nickel zinc ferrite having 4πMs values in the range of 2500-6500 Gauss. 
     
     
       20. The device according to  claim 12 , wherein the ferrite film comprises pure or doped barium hexaferrite.