Inventor · disambiguated record
Bipin Rajendran
Also filed as: RAJENDRAN BIPIN
64 granted patents·6 pending applications·775 citations·filing 2007–2023
99Inventor score
Top patents by PatentIndex Score
70 records- 0199US8107276B2Resistive memory devices having a not-and (NAND) structureBREITWISCH MATTHEW J·Filed 2009·Granted Jan 31, 2012·246 cites·16 claims
- 0298US8589320B2Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocksBREITWISCH MATTHEW J·Filed 2012·Granted Nov 19, 2013·46 cites·13 claims
- 0395US8311965B2Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance materialBREITWISCH MATTHEW J·Filed 2009·Granted Nov 13, 2012·71 cites·12 claims
- 0494US7505334B1Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2008·Granted Mar 17, 2009·34 cites·1 claims
- 0593US8856055B2Reconfigurable and customizable general-purpose circuits for neural networksBREZZO BERNARD V·Filed 2011·Granted Oct 7, 2014·38 cites·27 claims
- 0691US8238149B2Methods and apparatus for reducing defect bits in phase change memorySHIH YEN-HAO·Filed 2010·Granted Aug 7, 2012·15 cites·20 claims
- 0791US7868313B2Phase change memory device and method of manufactureIBM·Filed 2008·Granted Jan 11, 2011·25 cites·14 claims
- 0890US8648326B2Phase change memory electrode with sheath for reduced programming currentBREITWISCH MATTHEW J·Filed 2011·Granted Feb 11, 2014·10 cites·14 claims
- 0989US8350316B2Phase change memory cells having vertical channel access transistor and memory planeMACRONIX INT CO LTD·Filed 2009·Granted Jan 8, 2013·13 cites·20 claims
- 1088US7811879B2Process for PCM integration with poly-emitter BJT as access deviceIBM·Filed 2008·Granted Oct 12, 2010·16 cites·16 claims
- 1187US9269042B2Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devicesFRIEDMAN DANIEL J·Filed 2010·Granted Feb 23, 2016·15 cites·29 claims
- 1285US7944740B2Multi-level cell programming of PCM by varying the reset amplitudeIBM·Filed 2009·Granted May 17, 2011·19 cites·18 claims
- 1384US8933536B2Polysilicon pillar bipolar transistor with self-aligned memory elementLUNG HSIANG-LAN·Filed 2009·Granted Jan 13, 2015·11 cites·12 claims
- 1483US8030634B2Memory array with diode driver and method for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Oct 4, 2011·8 cites·9 claims
- 1583US7782646B2High density content addressable memory using phase change devicesIBM·Filed 2008·Granted Aug 24, 2010·14 cites·22 claims
- 1682US10628732B2Reconfigurable and customizable general-purpose circuits for neural networksIBM·Filed 2016·Granted Apr 21, 2020·3 cites·18 claims
- 1782US8447714B2System for electronic learning synapse with spike-timing dependent plasticity using phase change memoryBREITWISCH MATTHEW JOSEPH·Filed 2009·Granted May 21, 2013·25 cites·25 claims
- 1882US8275727B2Hardware analog-digital neural networksELMEGREEN BRUCE G·Filed 2009·Granted Sep 25, 2012·23 cites·17 claims
- 1980US8138574B2PCM with poly-emitter BJT access devicesCHEN TZE-CHIANG·Filed 2009·Granted Mar 20, 2012·6 cites·11 claims
- 2080US7764533B2Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2007·Granted Jul 27, 2010·10 cites·8 claims
- 2180US7602632B2Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2007·Granted Oct 13, 2009·11 cites·8 claims
- 2278US9946969B2Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devicesIBM·Filed 2016·Granted Apr 17, 2018·2 cites·17 claims
- 2377US7567473B2Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2007·Granted Jul 28, 2009·10 cites·6 claims
- 2476US8536675B2Thermally insulated phase change material memory cellsBREITWISCH MATTHEW J·Filed 2012·Granted Sep 17, 2013·2 cites·2 claims
- 2576US7881089B2Coding techniques for improving the sense margin in content addressable memoriesIBM·Filed 2009·Granted Feb 1, 2011·9 cites·25 claims
- 2674US8558210B2Polysilicon emitter BJT access device for PCRAMRAJENDRAN BIPIN·Filed 2012·Granted Oct 15, 2013·3 cites·13 claims
- 2773US7955958B2Method for fabrication of polycrystalline diodes for resistive memoriesIBM·Filed 2008·Granted Jun 7, 2011·3 cites·13 claims
- 2872US8217380B2Polysilicon emitter BJT access device for PCRAMRAJENDRAN BIPIN·Filed 2008·Granted Jul 10, 2012·4 cites·10 claims
- 2971US8233317B2Phase change memory device suitable for high temperature operationBREITWISCH MATTHEW J·Filed 2009·Granted Jul 31, 2012·7 cites·19 claims
- 3071US8030635B2Polysilicon plug bipolar transistor for phase change memoryMACRONIX INT CO LTD·Filed 2009·Granted Oct 4, 2011·6 cites·20 claims
- 3171US7902051B2Method for fabrication of single crystal diodes for resistive memoriesIBM·Filed 2008·Granted Mar 8, 2011·3 cites·14 claims
- 3270US8772906B2Thermally insulated phase change material cellsIBM·Filed 2013·Granted Jul 8, 2014·1 cites·3 claims
- 3368US9047938B2Phase change memory managementIBM·Filed 2013·Granted Jun 2, 2015·3 cites·19 claims
- 3468US8832011B2Electronic synapses from stochastic binary memory devicesRAJENDRAN BIPIN·Filed 2012·Granted Sep 9, 2014·4 cites·7 claims
- 3568US7639527B2Phase change memory dynamic resistance test and manufacturing methodsMACRONIX INT CO LTD·Filed 2008·Granted Dec 29, 2009·6 cites·21 claims
- 3667US9953261B2Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devicesIBM·Filed 2016·Granted Apr 24, 2018·1 cites·17 claims
- 3767US8527438B2Producing spike-timing dependent plasticity in an ultra-dense synapse cross-bar arrayJACKSON BRYAN LAWRENCE·Filed 2009·Granted Sep 3, 2013·9 cites·27 claims
- 3867US7863610B2Integrated circuit including silicide region to inhibit parasitic currentsQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jan 4, 2011·4 cites·24 claims
- 3965US8832010B2Electronic synapses from stochastic binary memory devicesRAJENDRAN BIPIN·Filed 2012·Granted Sep 9, 2014·3 cites·18 claims
- 4064US8898097B2Reconfigurable and customizable general-purpose circuits for neural networksBREZZO BERNARD V·Filed 2012·Granted Nov 25, 2014·2 cites·2 claims
- 4162US8120937B2Ternary content addressable memory using phase change devicesJI BRIAN L·Filed 2009·Granted Feb 21, 2012·5 cites·13 claims
- 4262US7965537B2Phase change memory with finite annular conductive pathIBM·Filed 2009·Granted Jun 21, 2011·2 cites·18 claims
- 4362US7894272B2Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2010·Granted Feb 22, 2011·2 cites·6 claims
- 4461US9460383B2Reconfigurable and customizable general-purpose circuits for neural networksIBM·Filed 2014·Granted Oct 4, 2016·1 cites·18 claims
- 4561US8559217B2Phase change material cell with stress inducer linerDUBOURDIEU CATHERINE A·Filed 2010·Granted Oct 15, 2013·2 cites·17 claims
- 4661US7602631B2Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2007·Granted Oct 13, 2009·4 cites·16 claims
- 4759US8119528B2Nanoscale electrodes for phase change memory devicesSCHROTT ALEJANDRO G·Filed 2008·Granted Feb 21, 2012·6 cites·1 claims
- 4859US2025209320A1A hardware system comprising a neural network and a method for operating such a hardware systemKING S COLLEGE LONDON·Filed 2023·Application pending·0 cites
- 4958US8466006B2Thermally insulated phase material cellsBREITWISCH MATTHEW J·Filed 2012·Granted Jun 18, 2013·0 cites·6 claims
- 5058US7872889B2High density ternary content addressable memoryIBM·Filed 2009·Granted Jan 18, 2011·3 cites·25 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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