Inventor · disambiguated record
Benjamin P. Mckee
Also filed as: MCKEE BENJAMIN · MCKEE BENJAMIN P
10 granted patents·2 pending applications·62 citations·filing 2002–2013
86Inventor score
Top patents by PatentIndex Score
12 records- 0192US7148097B2Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistorsTEXAS INSTRUMENTS INC·Filed 2005·Granted Dec 12, 2006·26 cites·17 claims
- 0290US7229871B2Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistorsTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 12, 2007·19 cites·18 claims
- 0385US7930656B2System and method for making photomasksTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 19, 2011·8 cites·11 claims
- 0472US8558318B2Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substratesPINTO ANGELO·Filed 2011·Granted Oct 15, 2013·2 cites·6 claims
- 0570US7892908B2Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substratesTEXAS INSTRUMENTS INC·Filed 2008·Granted Feb 22, 2011·2 cites·14 claims
- 0656US9123570B2Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substratesTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 1, 2015·0 cites·6 claims
- 0749US6682994B2Methods for transistor gate formation using gate sidewall implantationTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 27, 2004·3 cites·22 claims
- 0848US7098098B2Methods for transistors formation using selective gate implantationTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 29, 2006·2 cites·6 claims
- 0946US2006270139A1Methods for Transistor Formation Using Selective Gate ImplantationJOHNSON F SCOTT·Filed 2006·Application pending·0 cites
- 1041US7572693B2Methods for transistor formation using selective gate implantationTEXAS INSTRUMENTS INC·Filed 2006·Granted Aug 11, 2009·0 cites·17 claims
- 1135US2014011333A1Polycrystalline silicon efuse and resistor fabrication in a metal replacement gate processMCKEE BENJAMIN P·Filed 2012·Application pending·0 cites
- 1234US6969880B2High capacitive density stacked decoupling capacitor structureTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 29, 2005·0 cites·19 claims
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