Inventor

HU BINGHUA

US91 patents

⚠️ This page may combine multiple inventors who share the name “HU BINGHUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HU BINGHUA

TEXAS INSTRUMENTS INC

Drift region implant self-aligned to field relief oxide with sidewall dielectric

Sinker to buried layer connection region for narrow deep trenches

Drain centered LDMOS transistor with integrated dummy patterns

Isolation structure for IC with EPI regions sharing the same tank

LDMOS device with body diffusion self-aligned to gate

Dual deep trenches for high voltage isolation

Laterally diffused MOSFET

Semiconductor device with deep trench isolation and trench capacitor

Semiconductor structure with a doped region between two deep trench isolation structures

Semiconductor structure with a doped region between two deep trench isolation structures

Methods of manufacturing trench isolated drain extended MOS (demos) transistors and integrated circuits therefrom

LDMOS transistor double diffused region formation process

Method to manufacture LDMOS transistors with improved threshold voltage control

Method to manufacture LDMOS transistors with improved threshold voltage control

Deep trench with self-aligned sinker

Formation of a MOSFET using an angled implant

Vertical diffused MOSFET

LDMOS device with body diffusion self-aligned to gate

Drift region implant self-aligned to field relief oxide with sidewall dielectric

Isolation structure for IC with epi regions sharing the same tank

Method for forming trench capacitor having two dielectric layers and two polysilicon layers

Implant profiling with resist

Implant profiling with resist

MOS transistor with gate trench adjacent to drain extension field insulation

Semiconductor device with deep trench isolation and trench capacitor

High voltage CMOS with triple gate oxide

High voltage CMOS with triple gate oxide

Poly sandwich for deep trench fill

ESD protection device with deep trench isolation islands

Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistance

Drain extended transistor

High dose antimony implant through screen layer for n-type buried layer integration

Isolation structure for IC with epi regions sharing the same tank

Isolation structure for IC with epi regions sharing the same tank

High voltage transistor using diluted drain

Integrated trench capacitor

Poly sandwich for deep trench fill

Method of using electrical test structure for semiconductor trench depth monitor

Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device

Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device

Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistance

PENDHARKAR SAMEER P

Buried floating layer structure for improved breakdown

High voltage diode with reduced substrate injection

High voltage diode with reduced substrate injection

DENISON MARIE

MOS transistor with gate trench adjacent to drain extension field insulation

MOS transistor with gate trench adjacent to drain extension field insulation

SHENZHEN GREPOW BATTERY CO LTD

Portable power supply

Portable power supply

MERCK SHARP & DOHME

Papillomavirus vaccine compositions

HU BINGHUA

JFET having width defined by trench isolation