Inventor · disambiguated record
Deva Pattanayak
Also filed as: PATTANAYAK DEVA · PATTANAYAK DEVA N · PATTANAYAK DEVA NARAYAN
58 granted patents·4 pending applications·943 citations·filing 1985–2018
99Inventor score
Top patents by PatentIndex Score
62 records- 0197US7183610B2Super trench MOSFET including buried source electrode and method of fabricating the sameSILICONIX INC·Filed 2004·Granted Feb 27, 2007·118 cites·22 claims
- 0295US7544545B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2005·Granted Jun 9, 2009·27 cites·20 claims
- 0394US7557409B2Super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2007·Granted Jul 7, 2009·26 cites·2 claims
- 0494US4963951ALateral insulated gate bipolar transistors with improved latch-up immunityGEN ELECTRIC·Filed 1985·Granted Oct 16, 1990·100 cites·6 claims
- 0593US7833863B1Method of manufacturing a closed cell trench MOSFETVISHAY SILICONIX·Filed 2008·Granted Nov 16, 2010·20 cites·16 claims
- 0692US7361558B2Method of manufacturing a closed cell trench MOSFETVISHAY SILICONIX·Filed 2005·Granted Apr 22, 2008·19 cites·20 claims
- 0791US6906380B1Drain side gate trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2004·Granted Jun 14, 2005·65 cites·20 claims
- 0890US9431249B2Edge termination for super junction MOSFET devicesPATTANAYAK DEVA N·Filed 2011·Granted Aug 30, 2016·17 cites·20 claims
- 0990US9431550B2Trench polysilicon diodeCHEN QUFEI·Filed 2011·Granted Aug 30, 2016·9 cites·13 claims
- 1089US5655276AMethod of manufacturing two-dimensional array ultrasonic transducersGEN ELECTRIC·Filed 1995·Granted Aug 12, 1997·66 cites·15 claims
- 1186US9437424B2High mobility power metal-oxide semiconductor field-effect transistorsPATTANAYAK DEVA·Filed 2008·Granted Sep 6, 2016·10 cites·4 claims
- 1285US9425306B2Super junction trench power MOSFET devicesGAO YANG·Filed 2009·Granted Aug 23, 2016·12 cites·11 claims
- 1383US9842911B2Adaptive charge balanced edge terminationTIPIRNENI NAVEEN·Filed 2012·Granted Dec 12, 2017·6 cites·20 claims
- 1483US9443974B2Super junction trench power MOSFET device fabricationGAO YANG·Filed 2009·Granted Sep 13, 2016·11 cites·9 claims
- 1583US8368126B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2008·Granted Feb 5, 2013·11 cites·17 claims
- 1683US7279743B2Closed cell trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2003·Granted Oct 9, 2007·24 cites·13 claims
- 1781US7344945B1Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2004·Granted Mar 18, 2008·27 cites·16 claims
- 1880US8409954B2Ultra-low drain-source resistance power MOSFETCHAU THE-TU·Filed 2006·Granted Apr 2, 2013·8 cites·7 claims
- 1980US8183629B2Stacked trench metal-oxide-semiconductor field effect transistor devicePATTANAYAK DEVA·Filed 2008·Granted May 22, 2012·10 cites·10 claims
- 2080US6903412B2Trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Jun 7, 2005·21 cites·8 claims
- 2179US9853140B2Adaptive charge balanced MOSFET techniquesVISHAY SILICONIX·Filed 2012·Granted Dec 26, 2017·4 cites·14 claims
- 2279US9508596B2Processes used in fabricating a metal-insulator-semiconductor field effect transistorVISHAY SILICONIX·Filed 2014·Granted Nov 29, 2016·5 cites·18 claims
- 2378US9882044B2Edge termination for super-junction MOSFETsVISHAY SILICONIX·Filed 2015·Granted Jan 30, 2018·2 cites·6 claims
- 2477US7012005B2Self-aligned differential oxidation in trenches by ion implantationSILICONIX INC·Filed 2002·Granted Mar 14, 2006·21 cites·6 claims
- 2577US6875657B2Method of fabricating trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Apr 5, 2005·17 cites·14 claims
- 2677US6709930B2Thicker oxide formation at the trench bottom by selective oxide depositionSILICONIX INC·Filed 2002·Granted Mar 23, 2004·24 cites·13 claims
- 2776US4857983AMonolithically integrated semiconductor device having bidirectional conducting capability and method of fabricationGEN ELECTRIC·Filed 1987·Granted Aug 15, 1989·33 cites·24 claims
- 2875US7704836B2Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2008·Granted Apr 27, 2010·4 cites·7 claims
- 2974US10229988B2Adaptive charge balanced edge terminationVISHAY SILICONIX·Filed 2017·Granted Mar 12, 2019·1 cites·20 claims
- 3074US9577089B2Structures and methods of fabricating dual gate devicesTERRILL KYLE·Filed 2011·Granted Feb 21, 2017·3 cites·17 claims
- 3174US4888627AMonolithically integrated lateral insulated gate semiconductor deviceGEN ELECTRIC·Filed 1987·Granted Dec 19, 1989·30 cites·9 claims
- 3274US4847671AMonolithically integrated insulated gate semiconductor deviceGEN ELECTRIC·Filed 1987·Granted Jul 11, 1989·30 cites·10 claims
- 3371US4912541AMonolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabricationGEN ELECTRIC·Filed 1987·Granted Mar 27, 1990·28 cites·13 claims
- 3470US6913977B2Triple-diffused trench MOSFET and method of fabricating the sameSILICONIX INC·Filed 2003·Granted Jul 5, 2005·13 cites·11 claims
- 3570US5748564AAmplified acousto-optical vibration sensor and ultrasonic transducer arrayGEN ELECTRIC·Filed 1997·Granted May 5, 1998·38 cites·24 claims
- 3667US9425043B2High mobility power metal-oxide semiconductor field-effect transistorsPATTANAYAK DEVA·Filed 2006·Granted Aug 23, 2016·2 cites·5 claims
- 3767US9230810B2System and method for substrate wafer back side and edge cross section sealsLU HAMILTON·Filed 2010·Granted Jan 5, 2016·2 cites·2 claims
- 3867US7612431B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2008·Granted Nov 3, 2009·2 cites·10 claims
- 3966US8072013B1Trench polysilicon diodeCHEN QUFEI·Filed 2009·Granted Dec 6, 2011·2 cites·16 claims
- 4063US7233043B2Triple-diffused trench MOSFETSILICONIX INC·Filed 2005·Granted Jun 19, 2007·2 cites·7 claims
- 4162US9306056B2Semiconductor device with trench-like feed-throughsPATTANAYAK DEVA·Filed 2009·Granted Apr 5, 2016·2 cites·21 claims
- 4260US8883580B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2012·Granted Nov 11, 2014·1 cites·6 claims
- 4356US10340377B2Edge termination for super-junction MOSFETsVISHAY SILICONIX·Filed 2017·Granted Jul 2, 2019·0 cites·20 claims
- 4456US6245015B1Photosonic diffusion wave-based tumor detectorGEN ELECTRIC·Filed 1998·Granted Jun 12, 2001·18 cites·18 claims
- 4555US9831336B2Process for forming a short channel trench MOSFET and device formed therebyVISHAY SILICONIX·Filed 2014·Granted Nov 28, 2017·0 cites·20 claims
- 4655US6580853B2Optical high speed communications for a computed tomography x-ray machineFiled 2002·Granted Jun 17, 2003·9 cites·9 claims
- 4754US7692211B1Super GTO-based power blocksSILICON POWER CORP·Filed 2001·Granted Apr 6, 2010·10 cites·51 claims
- 4854US2010019316A1Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2009·Application pending·0 cites
- 4951US10546750B2System and method for substrate wafer back side and edge cross section sealsVISHAY SILICONIX·Filed 2016·Granted Jan 28, 2020·0 cites·5 claims
- 5051US10283587B2Modulated super junction power MOSFET devicesVISHAY SILICONIX·Filed 2018·Granted May 7, 2019·0 cites·17 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →