Inventor · disambiguated record
Leszek Sierzputowski
Also filed as: SIERZPUTOWSKI LESZEK · SIERZPUTOWSKI LESZEK P · SIERZPUTOWSKI LESZEK PIOTR
24 granted patents·3 pending applications·985 citations·filing 2002–2010
97Inventor score
Top patents by PatentIndex Score
27 records- 0198US7420261B2Bulk nitride mono-crystal including substrate for epitaxyAMMONO SP ZOO·Filed 2006·Granted Sep 2, 2008·93 cites·26 claims
- 0298US7132730B2Bulk nitride mono-crystal including substrate for epitaxyNICHIA CORP·Filed 2002·Granted Nov 7, 2006·113 cites·55 claims
- 0397US7364619B2Process for obtaining of bulk monocrystalline gallium-containing nitrideAMMONO SP ZOO·Filed 2003·Granted Apr 29, 2008·83 cites·27 claims
- 0497US7335262B2Apparatus for obtaining a bulk single crystal using supercritical ammoniaAMMONO SP ZOO·Filed 2002·Granted Feb 26, 2008·81 cites·8 claims
- 0597US7160388B2Process and apparatus for obtaining bulk monocrystalline gallium-containing nitrideAMMONO SP ZOO·Filed 2002·Granted Jan 9, 2007·140 cites·74 claims
- 0697US6656615B2Bulk monocrystalline gallium nitrideNICHIA CORP·Filed 2002·Granted Dec 2, 2003·220 cites·12 claims
- 0796US7057211B2Nitride semiconductor laser device and manufacturing method thereofAMMONO SP ZOO·Filed 2002·Granted Jun 6, 2006·51 cites·13 claims
- 0891US7081162B2Method of manufacturing bulk single crystal of gallium nitrideNICHIA CORP·Filed 2002·Granted Jul 25, 2006·32 cites·47 claims
- 0989US7387677B2Substrate for epitaxy and method of preparing the sameAMMONO SP ZOO·Filed 2003·Granted Jun 17, 2008·36 cites·14 claims
- 1088US7750355B2Light emitting element structure using nitride bulk single crystal layerAMMONO SP ZOO·Filed 2002·Granted Jul 6, 2010·22 cites·7 claims
- 1187US7422633B2Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrateAMMONO SP ZOO·Filed 2002·Granted Sep 9, 2008·23 cites·19 claims
- 1286US7935550B2Method of forming light-emitting device using nitride bulk single crystal layerAMMONO SP ZOO·Filed 2008·Granted May 3, 2011·7 cites·4 claims
- 1386US7374615B2Method and equipment for manufacturing aluminum nitride bulk single crystalAMMONO SP ZOO·Filed 2002·Granted May 20, 2008·21 cites·32 claims
- 1481US7314517B2Process for obtaining bulk mono-crystalline gallium-containing nitrideAMMONO SP ZOO·Filed 2003·Granted Jan 1, 2008·17 cites·9 claims
- 1580US7905957B2Method of obtaining bulk single crystals by seeded growthAMMONO SP ZOO·Filed 2005·Granted Mar 15, 2011·3 cites·40 claims
- 1678US7589358B2Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the sameAMMONO SP ZOO·Filed 2002·Granted Sep 15, 2009·14 cites·18 claims
- 1778US7410539B2Template type substrate and a method of preparing the sameAMMONO SP ZOO·Filed 2003·Granted Aug 12, 2008·16 cites·7 claims
- 1875US7315559B2Nitride semiconductor laser device and a method for improving its performanceAMMONO SP ZOO·Filed 2003·Granted Jan 1, 2008·10 cites·10 claims
- 1959US8754449B2High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereofDWILINSKI ROBERT·Filed 2005·Granted Jun 17, 2014·2 cites·15 claims
- 2055US8110848B2Substrate for epitaxy and method of preparing the sameDWILINSKI ROBERT·Filed 2008·Granted Feb 7, 2012·0 cites·9 claims
- 2153US7871843B2Method of preparing light emitting deviceAMMONO SP ZOO·Filed 2008·Granted Jan 18, 2011·0 cites·12 claims
- 2251US7811380B2Process for obtaining bulk mono-crystalline gallium-containing nitrideAMMONO SP ZOO·Filed 2003·Granted Oct 12, 2010·1 cites·21 claims
- 2349US2008050855A1Nitride semiconductor laser device and a method for improving its performanceDWILINSKI ROBERT·Filed 2007·Application pending·0 cites
- 2447US7744697B2Bulk monocrystalline gallium nitrideNICHIA CORP·Filed 2003·Granted Jun 29, 2010·0 cites·14 claims
- 2544US8398767B2Bulk mono-crystalline gallium-containing nitride and its applicationDWILINSKI ROBERT·Filed 2005·Granted Mar 19, 2013·0 cites·18 claims
- 2638US2006138431A1Light emitting device structure having nitride bulk single crystal layerDWILINSKI ROBERT·Filed 2002·Application pending·0 cites
- 2731US2010327292A1Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substratesAMMONO SP ZOO·Filed 2010·Application pending·0 cites
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