Inventor · disambiguated record
Wade J. Hodge
Also filed as: HODGE WADE J
7 granted patents·18 citations·filing 2001–2012
81Inventor score
Top patents by PatentIndex Score
7 records- 0165US7413967B2Yield improvement in silicon-germanium epitaxial growthIBM·Filed 2006·Granted Aug 19, 2008·2 cites·27 claims
- 0259US8853043B2Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)HODGE WADE J·Filed 2012·Granted Oct 7, 2014·1 cites·19 claims
- 0357US6887797B2Apparatus and method for forming an oxynitride insulating layer on a semiconductor waferIBM·Filed 2002·Granted May 3, 2005·4 cites·18 claims
- 0456US6436196B1Apparatus and method for forming an oxynitride insulating layer on a semiconductor waferIBM·Filed 2001·Granted Aug 20, 2002·4 cites·9 claims
- 0556US6346487B1Apparatus and method for forming an oxynitride insulating layer on a semiconductor waferIBM·Filed 2001·Granted Feb 12, 2002·4 cites·10 claims
- 0655US8299500B2Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base regionHODGE WADE J·Filed 2005·Granted Oct 30, 2012·1 cites·20 claims
- 0748US7118995B2Yield improvement in silicon-germanium epitaxial growthIBM·Filed 2004·Granted Oct 10, 2006·2 cites·5 claims
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