Inventor · disambiguated record
Shozo Muraoka
Also filed as: MURAOKA SHOZO
21 granted patents·426 citations·filing 1997–2000
96Inventor score
Top patents by PatentIndex Score
21 records- 0197US5968264AMethod and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the sameSHINETSU HANDOTAI KK·Filed 1998·Granted Oct 19, 1999·106 cites·13 claims
- 0292US6261361B1Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing itSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 17, 2001·34 cites·10 claims
- 0385US6364947B1Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the sameSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 2, 2002·24 cites·2 claims
- 0482US6048395AMethod for producing a silicon single crystal having few crystal defectsSHINETSU HANDOTAI KK·Filed 1998·Granted Apr 11, 2000·35 cites·5 claims
- 0578US6348180B1Silicon single crystal wafer having few crystal defectsSHINETSU HANDOTAI KK·Filed 2000·Granted Feb 19, 2002·12 cites·3 claims
- 0672US6077343ASilicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing itSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 20, 2000·33 cites·11 claims
- 0771US6334896B1Single-crystal silicon wafer having few crystal defects and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Jan 1, 2002·23 cites·6 claims
- 0869US6159438AMethod and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Dec 12, 2000·19 cites·3 claims
- 0964US6197109B1Method for producing low defect silicon single crystal doped with nitrogenSHINETSU HANDOTAI KK·Filed 1999·Granted Mar 6, 2001·17 cites·8 claims
- 1062US6120599ASilicon single crystal wafer having few crystal defects, and method for producing the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 19, 2000·13 cites·4 claims
- 1162US5882397ACrystal pulling methodSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 16, 1999·16 cites·2 claims
- 1260US6066306ASilicon single crystal wafer having few crystal defects, and method RFO producing the sameSHINETSU HANDOTAI KK·Filed 1998·Granted May 23, 2000·12 cites·2 claims
- 1358US5871578AMethods for holding and pulling single crystalSHINETSU HANDOTAI KK·Filed 1997·Granted Feb 16, 1999·13 cites·10 claims
- 1456US5968266AApparatus for manufacturing single crystal of siliconSHINETSU HANDOTAI KK·Filed 1997·Granted Oct 19, 1999·16 cites·5 claims
- 1552US6120598AMethod for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 19, 2000·8 cites·7 claims
- 1650US5964941ACrystal pulling method and apparatusSHIN ETSU HANDOTAI LTD·Filed 1997·Granted Oct 12, 1999·13 cites·9 claims
- 1749US5948164ASeed crystal holderSHINETSU HANDOTAI KK·Filed 1998·Granted Sep 7, 1999·13 cites·4 claims
- 1847US6027562AMethod for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the methodSHINETSU HANDOTAI KK·Filed 1998·Granted Feb 22, 2000·6 cites·6 claims
- 1943US6053975ACrystal holding apparatusSHINETSU HANDOTAI KK·Filed 1998·Granted Apr 25, 2000·6 cites·8 claims
- 2039US5911821AMethod of holding a monocrystal, and method of growing the sameSHINETSU HANDOTAI KK·Filed 1997·Granted Jun 15, 1999·4 cites·18 claims
- 2136US5976246AProcess for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1997·Granted Nov 2, 1999·3 cites·3 claims
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