Inventor · disambiguated record
Jurriaan Schmitz
Also filed as: SCHMITZ JURRIAAN
16 granted patents·1 pending application·751 citations·filing 1996–2011
95Inventor score
Files withKONINKL PHILIPS ELECTRONICS NV6PHILIPS CORP6NXP BV2KONINK PHILIPS ELECTRONICS N A1WALTERS ROBERT1
Top patents by PatentIndex Score
17 records- 0198US6271551B1Si-Ge CMOS semiconductor devicePHILIPS CORP·Filed 1996·Granted Aug 7, 2001·328 cites·6 claims
- 0293US6251729B1Method of manufacturing a nonvolatile memoryPHILIPS CORP·Filed 1999·Granted Jun 26, 2001·124 cites·14 claims
- 0390US8848194B2Integrated plasmonic nanocavity sensing deviceWALTERS ROBERT·Filed 2011·Granted Sep 30, 2014·12 cites·16 claims
- 0489US6472706B2Semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Oct 29, 2002·53 cites·12 claims
- 0588US6368915B1Method of manufacturing a semiconductor devicePHILIPS CORP·Filed 2000·Granted Apr 9, 2002·46 cites·12 claims
- 0685US6177303B1Method of manufacturing a semiconductor device with a field effect transistorPHILIPS CORP·Filed 1999·Granted Jan 23, 2001·62 cites·2 claims
- 0784US6743682B2Method of manufacturing a semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Jun 1, 2004·33 cites·8 claims
- 0876US6403426B1Method of manufacturing a semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Jun 11, 2002·20 cites·12 claims
- 0971US6406963B2Method of manufacturing a semiconductor deviceKONINK PHILIPS ELECTRONICS N A·Filed 2000·Granted Jun 18, 2002·19 cites·8 claims
- 1069US6476430B1Integrated circuitKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Nov 5, 2002·13 cites·4 claims
- 1168US6656760B2Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensorKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Dec 2, 2003·16 cites·10 claims
- 1260US7262460B2Vertical insulated gate transistor and manufacturing methodNXP BV·Filed 2003·Granted Aug 28, 2007·7 cites·11 claims
- 1345US6255183B1Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacersPHILIPS CORP·Filed 1998·Granted Jul 3, 2001·12 cites·17 claims
- 1437US6303453B1Method of manufacturing a semiconductor device comprising a MOS transistorPHILIPS CORP·Filed 1999·Granted Oct 16, 2001·6 cites·9 claims
- 1534US2005029572A1Fabrication of non-volatile memory cellFiled 2002·Application pending·0 cites
- 1633US7157349B2Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation materialNXP BV·Filed 2003·Granted Jan 2, 2007·0 cites·11 claims
- 1733US6969645B2Method of manufacturing a semiconductor device comprising a non-volatile memory with memory cellsKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Nov 29, 2005·0 cites·8 claims
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