Inventor · disambiguated record
Keiko Kushida
Also filed as: KUSHIDA KEIKO
17 granted patents·1 pending application·397 citations·filing 1985–2004
95Inventor score
Top patents by PatentIndex Score
18 records- 0188US6432767B2Method of fabricating semiconductor deviceHITACHI LTD·Filed 2001·Granted Aug 13, 2002·45 cites·15 claims
- 0288US6342712B1Semiconductor storage device with ferrielectric capacitor and metal-oxide isolationHITACHI LTD·Filed 1998·Granted Jan 29, 2002·57 cites·7 claims
- 0385US6097051ASemiconductor device and method of fabricatingHITACHI LTD·Filed 1996·Granted Aug 1, 2000·53 cites·18 claims
- 0479US6800889B2Semiconductor device and fabrication method thereofHITACHI LTD·Filed 2002·Granted Oct 5, 2004·21 cites·22 claims
- 0576US4803392APiezoelectric transducerHITACHI LTD·Filed 1987·Granted Feb 7, 1989·32 cites·18 claims
- 0674US6635913B2Semiconductor storage deviceHITACHI LTD·Filed 2001·Granted Oct 21, 2003·14 cites·4 claims
- 0773US6396092B1Semiconductor device and method for manufacturing the sameHITACHI LTD·Filed 1998·Granted May 28, 2002·28 cites·10 claims
- 0868US4692653AAcoustic transducers utilizing ZnO thin filmHITACHI LTD·Filed 1985·Granted Sep 8, 1987·22 cites·8 claims
- 0966US6462368B2Ferroelectric capacitor with a self-aligned diffusion barrierHITACHI LTD·Filed 2002·Granted Oct 8, 2002·13 cites·14 claims
- 1065US4677336APiezoelectric transducer and process for its productionHITACHI LTD·Filed 1986·Granted Jun 30, 1987·37 cites·7 claims
- 1161US6380574B1Ferroelectric capacitor with a self-aligned diffusion barrierHITACHI LTD·Filed 1998·Granted Apr 30, 2002·25 cites·35 claims
- 1257US6818523B2Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layerHITACHI LTD·Filed 2003·Granted Nov 16, 2004·5 cites·4 claims
- 1356US5914068ABi-layer oxide ferroelectricsHITACHI LTD·Filed 1995·Granted Jun 22, 1999·15 cites·37 claims
- 1453US6144052ASemiconductor device and its manufactureHITACHI LTD·Filed 1996·Granted Nov 7, 2000·13 cites·42 claims
- 1547US7256437B2Semiconductor storage device which includes a hydrogen diffusion inhibiting layerRENESAS TECH CORP·Filed 2004·Granted Aug 14, 2007·2 cites·21 claims
- 1644US6338994B1Semiconductor device and method of fabricating thereofHITACHI LTD·Filed 1999·Granted Jan 15, 2002·7 cites·14 claims
- 1744US5038068AThin film pattern and method of forming the sameHITACHI CONSTRUCTION MACHINERY·Filed 1989·Granted Aug 6, 1991·8 cites·36 claims
- 1834US2002047147A1Semiconductor device and process for producing the semiconductor deviceFiled 2001·Application pending·0 cites
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