Inventor · disambiguated record
Ilgyou Shin
Also filed as: SHIN ILGYOU
13 granted patents·2 pending applications·15 citations·filing 2020–2024
85Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15
Top patents by PatentIndex Score
15 records- 0197US11362182B2Semiconductor device including superlattice patternSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 14, 2022·14 cites·18 claims
- 0283US2025120149A1Semiconductor device including superlattice patternSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0382US12166081B2Semiconductor device-including source and drain regions and superlattice pattern having a pillar shapeSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0481US12256564B2Semiconductor device having a liner layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 0580US12453141B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
- 0679US11322583B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·1 cites·20 claims
- 0775US11777001B2Semiconductor device including superlattice patternSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 0874US11888028B2Semiconductor device having a liner layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 0972US11996443B2Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 28, 2024·0 cites·17 claims
- 1070US12328937B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 1169US11791400B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 1268US11417731B2Semiconductor device including a field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 1362US11201087B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 1460US11626401B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 11, 2023·0 cites·16 claims
- 1557US2024145573A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →