Inventor · disambiguated record
Yanjie Lian
Also filed as: LIAN YANJIE
8 granted patents·5 pending applications·18 citations·filing 2013–2025
79Inventor score
Top patents by PatentIndex Score
13 records- 0192US11049957B1LDMOS device with sinker linkMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Jun 29, 2021·6 cites·7 claims
- 0281US9159795B2High side DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Oct 13, 2015·7 cites·8 claims
- 0371US10090200B2Bipolar junction semiconductor device and method for manufacturing thereofCHENGDU MONOLITHIC POWER SYS·Filed 2016·Granted Oct 2, 2018·2 cites·21 claims
- 0471US9219146B2High voltage PMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Dec 22, 2015·3 cites·18 claims
- 0569US2024282808A1Ldmos having multiple field plates and associated manufacturing methodCHENGDU MONOLITHIC POWER SYS·Filed 2024·Application pending·0 cites
- 0660US12002848B2LDMOS having multiple field plates and associated manufacturing methodCHENGDU MONOLITHIC POWER SYS·Filed 2022·Granted Jun 4, 2024·0 cites·2 claims
- 0759US2025344460A1Ldmos having multiple field plates and associated manufacturing methodCHENGDU MONOLITHIC POWER SYS·Filed 2025·Application pending·0 cites
- 0851US2023261116A1Semiconductor device with low pinch-off voltage and methods for manufacturing the sameCHENGDU MONOLITHIC POWER SYS·Filed 2023·Application pending·0 cites
- 0948US11205722B2Lateral DMOS having reduced lateral sizeCHENGDU MONOLITHIC POWER SYS·Filed 2020·Granted Dec 21, 2021·0 cites·18 claims
- 1044US11081597B2Lateral schottky diode with high breakdown voltage capabilityCHENGDU MONOLITHIC POWER SYS·Filed 2019·Granted Aug 3, 2021·0 cites·23 claims
- 1141US2021193805A1Lateral transistor with lateral conductive field plate over a field plate positioning layerMONOLITHIC POWER SYSTEMS INC·Filed 2019·Application pending·0 cites
- 1238US9978846B2Method for forming stepped oxide on a substrateCHENGDU MONOLITHIC POWER SYS·Filed 2017·Granted May 22, 2018·0 cites·22 claims
- 1332US2017170312A1High voltage dmos and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2015·Application pending·0 cites
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