Inventor · disambiguated record
Daping Fu
Also filed as: FU DAPING
6 granted patents·5 pending applications·17 citations·filing 2013–2025
75Inventor score
Top patents by PatentIndex Score
11 records- 0192US11049957B1LDMOS device with sinker linkMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Jun 29, 2021·6 cites·7 claims
- 0281US9159795B2High side DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2013·Granted Oct 13, 2015·7 cites·8 claims
- 0371US10090200B2Bipolar junction semiconductor device and method for manufacturing thereofCHENGDU MONOLITHIC POWER SYS·Filed 2016·Granted Oct 2, 2018·2 cites·21 claims
- 0466US9230956B2Junction field effect transistors and associated fabrication methodsCHENGDU MONOLITHIC POWER SYS·Filed 2013·Granted Jan 5, 2016·2 cites·20 claims
- 0559US2025344460A1Ldmos having multiple field plates and associated manufacturing methodCHENGDU MONOLITHIC POWER SYS·Filed 2025·Application pending·0 cites
- 0651US11749751B2Lateral DMOS with integrated Schottky diodeCHENGDU MONOLITHIC POWER SYS·Filed 2020·Granted Sep 5, 2023·0 cites·18 claims
- 0751US2023261116A1Semiconductor device with low pinch-off voltage and methods for manufacturing the sameCHENGDU MONOLITHIC POWER SYS·Filed 2023·Application pending·0 cites
- 0844US11081597B2Lateral schottky diode with high breakdown voltage capabilityCHENGDU MONOLITHIC POWER SYS·Filed 2019·Granted Aug 3, 2021·0 cites·23 claims
- 0941US2021193805A1Lateral transistor with lateral conductive field plate over a field plate positioning layerMONOLITHIC POWER SYSTEMS INC·Filed 2019·Application pending·0 cites
- 1040US2014117416A1Semiconductor device and associated method for manufacturingCHENGDU MONOLITHIC POWER SYS·Filed 2013·Application pending·0 cites
- 1132US2017170312A1High voltage dmos and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2015·Application pending·0 cites
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