Inventor · disambiguated record
Michinori Irikawa
Also filed as: IRIKAWA MICHINORI
20 granted patents·333 citations·filing 1991–1997
96Inventor score
Files withFURUKAWA ELECTRIC CO LTD20
Top patents by PatentIndex Score
20 records- 0185US5583878ASemiconductor optical deviceFURUKAWA ELECTRIC CO LTD·Filed 1994·Granted Dec 10, 1996·48 cites·12 claims
- 0277US5572043ASchottky junction device having a Schottky junction of a semiconductor and a metalFURUKAWA ELECTRIC CO LTD·Filed 1995·Granted Nov 5, 1996·39 cites·7 claims
- 0375US5521935AStrained superlattice light emitting deviceFURUKAWA ELECTRIC CO LTD·Filed 1994·Granted May 28, 1996·36 cites·2 claims
- 0469US5319661ASemiconductor double heterostructure laser device with InP current blocking layerFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Jun 7, 1994·23 cites·15 claims
- 0567US5739543AOptical semiconductive device with inplanar compressive strainFURUKAWA ELECTRIC CO LTD·Filed 1994·Granted Apr 14, 1998·21 cites·21 claims
- 0663US5214662ASemiconductor optical devices with pn current blocking layers of wide-band gap materialsFURUKAWA ELECTRIC CO LTD·Filed 1991·Granted May 25, 1993·20 cites·12 claims
- 0760US5920079ASemiconductive light-emitting device having strained MQW with AlGaInAs barriersFURUKAWA ELECTRIC CO LTD·Filed 1995·Granted Jul 6, 1999·25 cites·17 claims
- 0857US5470786ASemiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 1994·Granted Nov 28, 1995·14 cites·2 claims
- 0957US5173912ADouble-carrier confinement laser diode with quantum well active and sch structuresFURUKAWA ELECTRIC CO LTD·Filed 1991·Granted Dec 22, 1992·19 cites·3 claims
- 1048US5608230AStrained superlattice semiconductor photodetector having a side contact structureFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Mar 4, 1997·12 cites·4 claims
- 1147US5432124AMethod of manufacturing compound semiconductorFURUKAWA ELECTRIC CO LTD·Filed 1994·Granted Jul 11, 1995·8 cites·6 claims
- 1246US5789760AMultiquantum barrier Schottky junction deviceFURUKAWA ELECTRIC CO LTD·Filed 1995·Granted Aug 4, 1998·12 cites·3 claims
- 1342US5926585AWaveguide type light receiving elementFURUKAWA ELECTRIC CO LTD·Filed 1996·Granted Jul 20, 1999·10 cites·2 claims
- 1442US5251224AQuantum barrier semiconductor optical deviceFURUKAWA ELECTRIC CO LTD·Filed 1991·Granted Oct 5, 1993·8 cites·5 claims
- 1540US5394424ASemiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Feb 28, 1995·8 cites·4 claims
- 1638US5991473AWaveguide type semiconductor photodetectorFURUKAWA ELECTRIC CO LTD·Filed 1997·Granted Nov 23, 1999·7 cites·3 claims
- 1738US5789765APhoto diode providing high-linearity signal current in response to light receiving signalFURUKAWA ELECTRIC CO LTD·Filed 1996·Granted Aug 4, 1998·7 cites·14 claims
- 1838US5362974AGroup II-VI material semiconductor optical device with strained multiquantum barriersFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Nov 8, 1994·6 cites·9 claims
- 1937US5932890AField effect transistor loaded with multiquantum barrierFURUKAWA ELECTRIC CO LTD·Filed 1997·Granted Aug 3, 1999·5 cites·3 claims
- 2037US5383213ASemiconductor device with current confinement structureFURUKAWA ELECTRIC CO LTD·Filed 1993·Granted Jan 17, 1995·5 cites·4 claims
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