Inventor · disambiguated record
Lea Di Cioccio
Also filed as: DI CIOCCIO LEA · DI CIOCCIO LéA
29 granted patents·8 pending applications·503 citations·filing 1997–2018
96Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE18DI CIOCCIO LEA6SOITEC SILICON ON INSULATOR2ST MICROELECTRONICS SA2COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT1
Top patents by PatentIndex Score
37 records- 0198US8501537B2Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methodsSADAKA MARIAM·Filed 2011·Granted Aug 6, 2013·221 cites·18 claims
- 0295US6225190B1Process for the separation of at least two elements of a structure in contact with one another by ion implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted May 1, 2001·104 cites·13 claims
- 0391US7538010B2Method of fabricating an epitaxially grown layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 26, 2009·8 cites·21 claims
- 0490US8093138B2Method of fabricating an epitaxially grown layerFAURE BRUCE·Filed 2009·Granted Jan 10, 2012·7 cites·20 claims
- 0589US9027821B2Process for direct bonding two elements comprising copper portions and portions of dielectric materialsDI CIOCCIO LEA·Filed 2011·Granted May 12, 2015·15 cites·18 claims
- 0687US8647983B2Simplified copper-copper bondingDI CIOCCIO LEA·Filed 2010·Granted Feb 11, 2014·12 cites·15 claims
- 0785US6391799B1Process for fabricating a structure of semiconductor-on-insulator type in particular SiCOICOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted May 21, 2002·82 cites·13 claims
- 0883US7960248B2Method for transfer of a thin layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jun 14, 2011·8 cites·19 claims
- 0976US10910782B2Treatment, before the bonding of a mixed Cu-oxide surface, by a plasma containing nitrogen and hydrogenVANDROUX LAURENT·Filed 2011·Granted Feb 2, 2021·7 cites·13 claims
- 1074US9064783B2Method for the direct bonding of a silicon oxide layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jun 23, 2015·5 cites·11 claims
- 1173US7482184B2Manufacture of a layer of optical interconnection on an electronic circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Jan 27, 2009·5 cites·14 claims
- 1271US11380648B2Process for manufacturing assembly pads on a carrier for the self-assembly of an electronic circuit on the carrierCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 5, 2022·1 cites·13 claims
- 1371US10020283B2Direct metal bonding methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jul 10, 2018·4 cites·19 claims
- 1471US9586207B2Etching method for forming a carrier having inward side walls in particular for confining a droplet for capillary self-assemblyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Mar 7, 2017·3 cites·6 claims
- 1570US9522450B2Support for capillary self-assembly with horizontal stabilisation, fabrication method and useCOMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2014·Granted Dec 20, 2016·3 cites·14 claims
- 1670US9240389B2Method for producing at least one pad assembly on a support for the self-assembly of an integrated circuit chip on the support by the formation of a fluorinated material surrounding the pad and exposure of the pad and the fluorinated material to an ultraviolet treatment in the presence of ozoneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jan 19, 2016·3 cites·16 claims
- 1769US11121117B2Method for self-assembling microelectronic componentsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Sep 14, 2021·1 cites·17 claims
- 1868US8039370B2Method of transferring a layer onto a liquid materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Oct 18, 2011·4 cites·18 claims
- 1965US8302278B2Method and device for separating a structureZUSSY MARC·Filed 2008·Granted Nov 6, 2012·2 cites·31 claims
- 2064US9318527B2Method for producing photosensitive infrared detectorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Apr 19, 2016·2 cites·29 claims
- 2160US11305372B2Method of assembly by direct bonding between two elements, each element comprising portions of metal and dielectric materialsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Apr 19, 2022·1 cites·17 claims
- 2260US9620412B2Method for modifying the crystalline structure of a copper elementDI CIOCCIO LEA·Filed 2010·Granted Apr 11, 2017·1 cites·11 claims
- 2357US8951809B2Method of transfer by means of a ferroelectric substrateMOULET JEAN-SEBASTIEN·Filed 2009·Granted Feb 10, 2015·2 cites·22 claims
- 2455US9431373B2Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structureST MICROELECTRONICS SA·Filed 2014·Granted Aug 30, 2016·0 cites·16 claims
- 2550US8916393B2Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structureST MICROELECTRONICS SA·Filed 2012·Granted Dec 23, 2014·0 cites·16 claims
- 2650US2008009123A1Method for Bonding Two Free Surfaces, Respectively of First and Second Different SubstratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Application pending·0 cites
- 2746US7476595B2Method for the molecular bonding of microelectronic components to a polymer filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jan 13, 2009·2 cites·19 claims
- 2842US8642391B2Self-assembly of chips on a substrateDI CIOCCIO LEA·Filed 2009·Granted Feb 4, 2014·0 cites·23 claims
- 2939US2018301433A1Emissive led display device manufacturing methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Application pending·0 cites
- 3039US2008311725A1Method For Assembling Substrates By Depositing An Oxide Or Nitride Thin Bonding LayerDI CIOCCIO LEA·Filed 2006·Application pending·0 cites
- 3139US2009262294A9Process for fabricating a flexible electronic device of the screen type, including a plurality of thin-film componentsTEMPLIER FRANCOIS·Filed 2006·Application pending·0 cites
- 3238US2008020547A1Method Of Transferring At Least One Object Of Micrometric Or Millimetric Size By Means Of A Polymer HandleKOSTRZEWA MAREK·Filed 2005·Application pending·0 cites
- 3337US2006125057A1Method for the production of a composite sicoi-type substrate comprising an epitaxy stageDI CIOCCIO LEA·Filed 2003·Application pending·0 cites
- 3436US9064863B2Method for directly adhering two plates together, including a step of forming a temporary protective nitrogenDI CIOCCIO LéA·Filed 2011·Granted Jun 23, 2015·0 cites·8 claims
- 3535US7981238B2Method for relaxing a stressed thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jul 19, 2011·0 cites·18 claims
- 3635US2005258483A1Quasi-vertical power semiconductor device on a composite substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Application pending·0 cites
- 3734US2005282358A1Method for transferring an electrically active thin layerSOITEC SILICON ON INSULATOR·Filed 2003·Application pending·0 cites
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