Inventor · disambiguated record
Jiang-Kai Zuo
Also filed as: ZUO JIANG-KAI
103 granted patents·3 pending applications·548 citations·filing 2005–2018
99Inventor score
Top patents by PatentIndex Score
106 records- 0196US9905687B1Semiconductor device and method of makingNXP USA INC·Filed 2017·Granted Feb 27, 2018·21 cites·20 claims
- 0296US8541862B2Semiconductor device with self-biased isolationYANG HONGNING·Filed 2011·Granted Sep 24, 2013·23 cites·16 claims
- 0395US9941350B1Semiconductor device isolation via depleted coupling layerNXP USA INC·Filed 2017·Granted Apr 10, 2018·13 cites·16 claims
- 0495US9306060B1Semiconductor devices and related fabrication methodsYANG HONGNING·Filed 2014·Granted Apr 5, 2016·19 cites·20 claims
- 0594US9614074B1Partial, self-biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Apr 4, 2017·13 cites·17 claims
- 0694US9508845B1LDMOS device with high-potential-biased isolation ringFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 29, 2016·14 cites·20 claims
- 0794US8247869B2LDMOS transistors with a split gateYANG HONGNING·Filed 2010·Granted Aug 21, 2012·19 cites·16 claims
- 0894US7776700B2LDMOS device and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 17, 2010·35 cites·20 claims
- 0994US7608513B2Dual gate LDMOS device fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 27, 2009·30 cites·20 claims
- 1093US9831338B1Alternating source region arrangementNXP USA INC·Filed 2017·Granted Nov 28, 2017·8 cites·24 claims
- 1193US8772871B2Partially depleted dielectric resurf LDMOSYANG HONGNING·Filed 2010·Granted Jul 8, 2014·16 cites·20 claims
- 1293US8575692B2Near zero channel length field drift LDMOSYANG HONGNING·Filed 2011·Granted Nov 5, 2013·14 cites·19 claims
- 1393US8198703B2Zener diode with reduced substrate currentLIN XIN·Filed 2010·Granted Jun 12, 2012·19 cites·16 claims
- 1492US9590097B2Semiconductor devices and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 7, 2017·7 cites·20 claims
- 1592US9165918B1Composite semiconductor device with multiple threshold voltagesYANG HONGNING·Filed 2014·Granted Oct 20, 2015·17 cites·20 claims
- 1690US10297590B1Electro-static discharge protection device and method of makingNXP USA INC·Filed 2018·Granted May 21, 2019·6 cites·19 claims
- 1790US9543454B1Diodes with multiple junctionsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 10, 2017·6 cites·15 claims
- 1888US9728600B2Partially biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Aug 8, 2017·5 cites·19 claims
- 1988US9680011B2Self-adjusted isolation bias in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·20 claims
- 2088US9231083B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2012·Granted Jan 5, 2016·8 cites·14 claims
- 2188US8319283B2Laterally diffused metal oxide semiconductor (LDMOS) device with multiple gates and doped regionsMIN WON GI·Filed 2009·Granted Nov 27, 2012·23 cites·13 claims
- 2287US9871135B2Semiconductor device and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Jan 16, 2018·5 cites·9 claims
- 2387US8669640B2Bipolar transistorLIN XIN·Filed 2009·Granted Mar 11, 2014·12 cites·20 claims
- 2486US7795674B2Dual gate LDMOS devicesFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Sep 14, 2010·9 cites·20 claims
- 2585US9601564B2Deep trench isolationFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 21, 2017·4 cites·20 claims
- 2685US9136323B2Drain-end drift diminution in semiconductor devicesYANG HONGNING·Filed 2014·Granted Sep 15, 2015·6 cites·20 claims
- 2785US8853780B2Semiconductor device with drain-end drift diminutionYANG HONGNING·Filed 2012·Granted Oct 7, 2014·7 cites·19 claims
- 2884US7910991B2Dual gate lateral diffused MOS transistorFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·9 cites·10 claims
- 2983US7700405B2Microelectronic assembly with improved isolation voltage performance and a method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 20, 2010·10 cites·20 claims
- 3083US7256471B2Antifuse element and electrically redundant antifuse array for controlled rupture locationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 14, 2007·12 cites·18 claims
- 3182US9666671B2Semiconductor device with composite drift region and related fabrication methodZHANG ZHIHONG·Filed 2014·Granted May 30, 2017·5 cites·18 claims
- 3282US9490322B2Semiconductor device with enhanced 3D resurfYANG HONGNING·Filed 2013·Granted Nov 8, 2016·5 cites·20 claims
- 3382US8896102B2Die edge sealing structures and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Nov 25, 2014·4 cites·19 claims
- 3482US8049299B2Antifuses with curved breakdown regionsFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Nov 1, 2011·9 cites·16 claims
- 3582US7795702B2Microelectronic assemblies with improved isolation voltage performanceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Sep 14, 2010·6 cites·20 claims
- 3681US9601595B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2015·Granted Mar 21, 2017·3 cites·15 claims
- 3781US9136327B1Deep trench isolation structures and systems and methods including the sameCHENG XU·Filed 2014·Granted Sep 15, 2015·4 cites·6 claims
- 3881US8652930B2Semiconductor device with self-biased isolationYANG HONGNING·Filed 2013·Granted Feb 18, 2014·4 cites·20 claims
- 3981US7393752B2Semiconductor devices and method of fabricationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 1, 2008·6 cites·13 claims
- 4079US8847358B2Bipolar transistorLIN XIN·Filed 2012·Granted Sep 30, 2014·4 cites·13 claims
- 4179US7915704B2Schottky diodeFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Mar 29, 2011·8 cites·17 claims
- 4278US10177252B2Semiconductor device isolation with RESURF layer arrangementNXP USA INC·Filed 2016·Granted Jan 8, 2019·2 cites·12 claims
- 4378US9105657B2Methods for producing near zero channel length field drift LDMOSYANG HONGNING·Filed 2013·Granted Aug 11, 2015·3 cites·20 claims
- 4478US9093567B2Diodes with multiple junctions and fabrication methods thereforLIN XIN·Filed 2013·Granted Jul 28, 2015·3 cites·14 claims
- 4578US7700417B2Methods for forming cascode current mirrorsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 20, 2010·6 cites·20 claims
- 4678US7239543B2Magnetic tunnel junction current sensorsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 3, 2007·11 cites·20 claims
- 4776US9343526B2Deep trench isolationFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted May 17, 2016·3 cites·7 claims
- 4876US7553704B2Antifuse element and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 30, 2009·6 cites·13 claims
- 4975US7910441B2Multi-gate semiconductor device and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 22, 2011·5 cites·8 claims
- 5074US8946041B2Methods for forming high gain tunable bipolar transistorsLIN XIN·Filed 2012·Granted Feb 3, 2015·3 cites·20 claims
Showing the top 50 of 106 patent records by PatentIndex Score.
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