Inventor · disambiguated record
Lawrence Laterza
Also filed as: LATERZA LAWRENCE · LATERZA LAWRENCE E
8 granted patents·1 pending application·206 citations·filing 1985–2002
89Inventor score
Top patents by PatentIndex Score
9 records- 0188US6489660B1Low-voltage punch-through bi-directional transient-voltage suppression devicesGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 3, 2002·59 cites·9 claims
- 0274US5882986ASemiconductor chips having a mesa structure provided by sawingGEN SEMICONDUCTOR INC·Filed 1998·Granted Mar 16, 1999·48 cites·9 claims
- 0356US5432121AMethod for fabricating a multilayer epitaxial structureGI CORP·Filed 1994·Granted Jul 11, 1995·27 cites·18 claims
- 0454US5360509ALow cost method of fabricating epitaxial semiconductor devicesGI CORP·Filed 1993·Granted Nov 1, 1994·25 cites·25 claims
- 0551US6602769B2Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the sameGEN SEMICONDUCTOR INC·Filed 2002·Granted Aug 5, 2003·5 cites·9 claims
- 0651US4659400AMethod for forming high yield epitaxial wafersGEN INSTRUMENT CORP·Filed 1985·Granted Apr 21, 1987·25 cites·38 claims
- 0744US5640043AHigh voltage silicon diode with optimum placement of silicon-germanium layersGEN INSTRUMENT CORP·Filed 1995·Granted Jun 17, 1997·10 cites·15 claims
- 0830US2004075160A1Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operationFiled 2002·Application pending·0 cites
- 0927US5324685AMethod for fabricating a multilayer epitaxial structureHIRTZ REINHOLD·Filed 1993·Granted Jun 28, 1994·7 cites·9 claims
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